中国物理B ›› 2000, Vol. 9 ›› Issue (9): 672-675.doi: 10.1088/1009-1963/9/9/007
李巧文1, 吴自勤2, 吴锋民3
Wu Feng-min (吴锋民)a, Li Qiao-wen (李巧文)b, Wu Zi-qin (吴自勤)c
摘要: The diffusion of small clusters such as dimers and trimers on metal surface and the growth of two-dimensional thin films are studied by Monte Carlo simulation, using realistic growth model and physical parameters. It is found that small cluster diffusion plays an important role in the process of thin film growth at not very low temperature. It affects not only the island density and the size of islands but also the critical value of saturation occurring during growth of thin films. The effect of small cluster diffusion depends on both the size of critical nucleus and the growth temperature. The simulation results also show that the larger the cluster allowed to diffuse, the easier the saturation that takes place, giving rise to the lower critical coverage of saturation occurring. It is suggested that the effect of small cluster diffusion should be included in establishing the growth models of thin films.
中图分类号: (Self-diffusion in metals, semimetals, and alloys)