中国物理B ›› 1999, Vol. 8 ›› Issue (9): 694-701.doi: 10.1088/1004-423X/8/9/009

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

ELECTRONIC STRUCTURE OF THE ZnTe/CdSe(100) INTERFACES WITH ATOM INTERCHANGE

杨仕娥, 贾瑜, 马丙现, 申三国, 范希庆   

  1. Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China
  • 收稿日期:1999-03-06 出版日期:1999-09-20 发布日期:1999-09-20
  • 基金资助:
    Project supported by the Natural Science Foundatoin of Henan Province, China (Grant No. 984040500).

ELECTRONIC STRUCTURE OF THE ZnTe/CdSe(100) INTERFACES WITH ATOM INTERCHANGE

Yang Shi-e (杨仕娥), Jia Yu (贾瑜), Ma Bing-xian (马丙现), Shen San-guo (申三国), Fan Xi-qing (范希庆)   

  1. Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China
  • Received:1999-03-06 Online:1999-09-20 Published:1999-09-20
  • Supported by:
    Project supported by the Natural Science Foundatoin of Henan Province, China (Grant No. 984040500).

PDF (PC)

470

赞

摘要： By using the combination of the first-nearest neighbor tight-binding model sp3s* and Green function method in the frame of the scattering theory, we studied the electronic structure of ZnTe/CdSe(100) heterojunction with cation layers interchange across ZnSe-like or CdTe-like interface, and presented the interface band structures and wavevector-resolved interface layer densities of states. By comparing with the electronic states of ideal interfaces, we analyzed the nature and origins of all interface states, and discussed the influence of atom layers interchange on interface electronic structure.

Abstract: By using the combination of the first-nearest neighbor tight-binding model sp3s* and Green function method in the frame of the scattering theory, we studied the electronic structure of ZnTe/CdSe(100) heterojunction with cation layers interchange across ZnSe-like or CdTe-like interface, and presented the interface band structures and wavevector-resolved interface layer densities of states. By comparing with the electronic states of ideal interfaces, we analyzed the nature and origins of all interface states, and discussed the influence of atom layers interchange on interface electronic structure.

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 73.20.At (Surface states, band structure, electron density of states)