中国物理B ›› 1994, Vol. 3 ›› Issue (6): 439-444.doi: 10.1088/1004-423X/3/6/006

• • 上一篇    下一篇

RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES

赵元富1, 刘昶时2, 马忠权2   

  1. (1)Lishan Institute of Microelectronics, Areo-Space Industry Ministry, Xi'an 710600, China; (2)Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, China
  • 收稿日期:1993-08-12 出版日期:1994-06-20 发布日期:1994-06-20

RADIATION-INDUCED DEFECTS IN RADIATION HARD AND SOFT OXIDES

LIU CHANG-SHI (刘昶时)a, MA ZHONG-QUAN (马忠权)a, ZHAO YUAN-FU (赵元富)b   

  1. a Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011, China; b Lishan Institute of Microelectronics, Areo-Space Industry Ministry, Xi'an 710600, China
  • Received:1993-08-12 Online:1994-06-20 Published:1994-06-20

PDF (PC)

355

赞

摘要： The point defects of Pb and E′ in radiation hard and soft Si-SiO2 samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of 60Co radiation and the radiation bias field. Besides, the ΔH (peak of peak) of Pb and E′ indicated that Pb is the defect with slow electron spin relaxation time while E′ is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.

Abstract: The point defects of Pb and E′ in radiation hard and soft Si-SiO2 samples were examined using electron spin resonance (ESR). The experimental results showed that these defects were correlated with the ways of oxidation process, the dosage of 60Co radiation and the radiation bias field. Besides, the $\Delta$H (peak of peak) of Pb and E′ indicated that Pb is the defect with slow electron spin relaxation time while E′ is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.

中图分类号:  (Color centers and other defects)

  • 76.30.Mi
61.72.Hh (Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)) 61.80.Ed (γ-ray effects) 81.65.Mq (Oxidation)