中国物理B ›› 2026, Vol. 35 ›› Issue (5): 58103-058103.doi: 10.1088/1674-1056/ae40da
• • 上一篇
Improved stability of amorphous InGaZnO4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines
Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利)†
- School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
Improved stability of amorphous InGaZnO4 thin-film transistors under negative bias illumination stress with the incorporation of fluorine passivation and metal shielding lines
Yuhan Feng(冯雨涵), Nannan Lv(吕楠楠), Huaisheng Wang(王槐生), Mingxiang Wang(王明湘), and Dongli Zhang(张冬利)†
- School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
摘要： The instability phenomenon under negative bias illumination stress (NBIS) remains a major challenge for the application of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) in active-matrix displays. In this paper, we employ fluorine plasma treatment and a segmented metal cover line approach to enhance the stability of elevated metal metal-oxide (EMMO) a-IGZO TFTs under NBIS. At room temperature, after 15 minutes of fluorine treatment, $\Delta V_{\rm ON}$ decreases from 5.53 V to 2.02 V. This improvement is mainly attributed to the fact that fluorine atoms fill the ionized oxygen vacancies in a-IGZO, thereby reducing the density of defect states in the channel. Further adding 2.0 μm wide metal-covered wires reduces the $\Delta V_{\rm ON}$ to 0.35 V. Under 80 ${^\circ}$C NBIS, the $\Delta V_{\rm ON}$ is limited to 3.79 V. This improvement is mainly attributed to the light-shielding effect of the metal lines and the passivation of oxygen vacancies by fluorine, thereby enhancing device stability under NBIS.
中图分类号: (Amorphous semiconductors)
- 81.05.Gc