中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97201-097201.doi: 10.1088/1674-1056/ade1c6

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Acoustic detection of high-resistance states in gated bilayer graphene devices

Guo-Quan Qin(秦国铨)1,2,3, Yi-Bo Wang(王奕博)1,2,3, Guo-Sheng Lei(雷国盛)1,2,3, Zhuo-Zhi Zhang(张拙之)1,2,3, Xiang-Xiang Song(宋骧骧)1,2,3,†, and Guo-Ping Guo(郭国平)1,3,4   

  1. 1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
    2 Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China;
    3 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    4 Origin Quantum Computing Company Limited, Hefei 230088, China
  • 收稿日期:2025-05-13 修回日期:2025-06-06 接受日期:2025-06-06 出版日期:2025-08-21 发布日期:2025-09-17
  • 通讯作者: Xiang-Xiang Song E-mail:songxx90@ustc.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Jiangsu Province (Grant No. BK20240123), the National Key Research and Development Program of China (Grant No. 2022YFA1405900), and the National Natural Science Foundation of China (Grant Nos. 12274397, 12274401, and 12034018).

Acoustic detection of high-resistance states in gated bilayer graphene devices

Guo-Quan Qin(秦国铨)1,2,3, Yi-Bo Wang(王奕博)1,2,3, Guo-Sheng Lei(雷国盛)1,2,3, Zhuo-Zhi Zhang(张拙之)1,2,3, Xiang-Xiang Song(宋骧骧)1,2,3,†, and Guo-Ping Guo(郭国平)1,3,4   

  1. 1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
    2 Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China;
    3 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    4 Origin Quantum Computing Company Limited, Hefei 230088, China
  • Received:2025-05-13 Revised:2025-06-06 Accepted:2025-06-06 Online:2025-08-21 Published:2025-09-17
  • Contact: Xiang-Xiang Song E-mail:songxx90@ustc.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Jiangsu Province (Grant No. BK20240123), the National Key Research and Development Program of China (Grant No. 2022YFA1405900), and the National Natural Science Foundation of China (Grant Nos. 12274397, 12274401, and 12034018).

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摘要： Applying a perpendicular electric field to bilayer graphene (BLG) induces an electrically tunable bandgap, so that insulating states with resistances exceeding $\sim {{10}}^{{8}} { \Omega }$ can be generated. These high-resistance states pinch off the conducting channel, thereby enabling high-quality gated devices for classical and quantum electronics. However, it is challenging to precisely quantify these states electrically due to their high resistances, especially when different areas of the device are operated in different high-resistance states. Here, taking advantage of the strong acoustoelectric effect, we demonstrate the detection of these high-resistance states in a multi-gated BLG device using surface acoustic waves. Under different gating configurations, the device is operated in different high-resistance states. Although these states have similar resistances of $\sim {{10}}^{{8}} { \Omega }$, we show their acoustoelectric responses exhibit pronounced differences, thereby allowing the acoustic detection. More interestingly, we demonstrate that when the conducting channel is pinched off by one top gate, we are still able to acoustically, but not electrically, detect the gating effect of another top gate. Our results reveal the powerful capability and the promising future of acoustically characterizing BLG and other two-dimensional materials, especially their electronic states with high resistances.

关键词: bilayer graphene, surface acoustic waves, acoustoelectric effects, high-resistance states

Abstract: Applying a perpendicular electric field to bilayer graphene (BLG) induces an electrically tunable bandgap, so that insulating states with resistances exceeding $\sim {{10}}^{{8}} { \Omega }$ can be generated. These high-resistance states pinch off the conducting channel, thereby enabling high-quality gated devices for classical and quantum electronics. However, it is challenging to precisely quantify these states electrically due to their high resistances, especially when different areas of the device are operated in different high-resistance states. Here, taking advantage of the strong acoustoelectric effect, we demonstrate the detection of these high-resistance states in a multi-gated BLG device using surface acoustic waves. Under different gating configurations, the device is operated in different high-resistance states. Although these states have similar resistances of $\sim {{10}}^{{8}} { \Omega }$, we show their acoustoelectric responses exhibit pronounced differences, thereby allowing the acoustic detection. More interestingly, we demonstrate that when the conducting channel is pinched off by one top gate, we are still able to acoustically, but not electrically, detect the gating effect of another top gate. Our results reveal the powerful capability and the promising future of acoustically characterizing BLG and other two-dimensional materials, especially their electronic states with high resistances.

Key words: bilayer graphene, surface acoustic waves, acoustoelectric effects, high-resistance states

中图分类号:  (Electronic transport in graphene)

  • 72.80.Vp
43.38.Rh (Surface acoustic wave transducers) 72.50.+b (Acoustoelectric effects)