中国物理B ›› 2024, Vol. 33 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/ad362f

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Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

Zhao Guan(关赵)1,†,‡, Tao Wang(王陶)1,†, Yunzhe Zheng(郑赟喆)1, Yue Peng(彭悦)2, Luqi Wei(魏鹿奇)1, Yuke Zhang(张宇科)1, Abliz Mattursun(阿卜力孜cdot麦提图尔荪)1, Jiahao Huang(黄家豪)1, Wen-Yi Tong(童文旖)1, Genquan Han(韩根全)2, Binbin Chen(陈斌斌)1,3, Ping-Hua Xiang(向平华)1,3, Chun-Gang Duan(段纯刚)1,3, and Ni Zhong(钟妮)1,3,§   

  1. 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China;
    2 School of Microelectronics, Xidian University, Xi'an 710071, China;
    3 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
  • 收稿日期:2024-02-25 修回日期:2024-03-15 接受日期:2024-03-21 出版日期:2024-06-18 发布日期:2024-06-18
  • 通讯作者: Zhao Guan, Ni Zhong E-mail:zguan@ee.ecnu.edu.cn;nzhong@ee.ecnu.edu.cn
  • 基金资助:
    Project supported by the the National Key Research and Development Program of China (Grant No. 2022YFA1402902), the National Natural Science Foundation of China (Grant Nos. 12074119, 12204171, 12134003, and 12374145), the Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission, ECNU (East China Normal University) Multifunctional Platform for Innovation (006), and the Fundamental Research Funds for the Central Universities.

Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film

Zhao Guan(关赵)1,†,‡, Tao Wang(王陶)1,†, Yunzhe Zheng(郑赟喆)1, Yue Peng(彭悦)2, Luqi Wei(魏鹿奇)1, Yuke Zhang(张宇科)1, Abliz Mattursun(阿卜力孜cdot麦提图尔荪)1, Jiahao Huang(黄家豪)1, Wen-Yi Tong(童文旖)1, Genquan Han(韩根全)2, Binbin Chen(陈斌斌)1,3, Ping-Hua Xiang(向平华)1,3, Chun-Gang Duan(段纯刚)1,3, and Ni Zhong(钟妮)1,3,§   

  1. 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China;
    2 School of Microelectronics, Xidian University, Xi'an 710071, China;
    3 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
  • Received:2024-02-25 Revised:2024-03-15 Accepted:2024-03-21 Online:2024-06-18 Published:2024-06-18
  • Contact: Zhao Guan, Ni Zhong E-mail:zguan@ee.ecnu.edu.cn;nzhong@ee.ecnu.edu.cn
  • Supported by:
    Project supported by the the National Key Research and Development Program of China (Grant No. 2022YFA1402902), the National Natural Science Foundation of China (Grant Nos. 12074119, 12204171, 12134003, and 12374145), the Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission, ECNU (East China Normal University) Multifunctional Platform for Innovation (006), and the Fundamental Research Funds for the Central Universities.

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摘要： Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90$^\circ$ ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

关键词: HfO$_{2}$-based ferroelectrics, ferroelasticity, piezoelectric force microscopy (PFM)

Abstract: Hafnium zirconium oxides (HZO), which exhibit ferroelectric properties, are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor (CMOS) compatibility. In addition to piezoelectricity, ferroelectricity, and flexoelectricity, this study reports the observation of ferroelasticity using piezoelectric force microscopy (PFM) and scanning transmission electron microscopy (STEM). The dynamics of 90$^\circ$ ferroelastic domains in HZO thin films are investigated under the influence of an electric field. Switching of the retentive domains is observed through repeated wake-up measurements. This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

Key words: HfO$_{2}$-based ferroelectrics, ferroelasticity, piezoelectric force microscopy (PFM)

中图分类号:  (Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties)

  • 77.90.+k
77.65.-j (Piezoelectricity and electromechanical effects) 77.55.D (High-permittivity gate dielectric films)