中国物理B ›› 2024, Vol. 33 ›› Issue (4): 46201-046201.doi: 10.1088/1674-1056/ad23d4

• • 上一篇    下一篇

Stability and melting behavior of boron phosphide under high pressure

Wenjia Liang(梁文嘉)1, Xiaojun Xiang(向晓君)1, Qian Li(李倩)1, Hao Liang(梁浩)2,3,‡, and Fang Peng(彭放)1,†   

  1. 1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    2 School of Mathematics and Physics, Southwest University of Science and Technology, Mianyang 621900, China;
    3 Center for High Pressure Science and Technology Advanced Research(HPSTAR), Shanghai 201203, China
  • 收稿日期:2023-10-16 修回日期:2024-01-11 接受日期:2024-01-30 出版日期:2024-03-19 发布日期:2024-03-27
  • 通讯作者: Hao Liang, Fang Peng E-mail:lh910518@126.con;pengfang@scu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 12074273) and the Sichuan Science and Technology Program (Grant No. 2022NSFSC1810).

Stability and melting behavior of boron phosphide under high pressure

Wenjia Liang(梁文嘉)1, Xiaojun Xiang(向晓君)1, Qian Li(李倩)1, Hao Liang(梁浩)2,3,‡, and Fang Peng(彭放)1,†   

  1. 1 Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    2 School of Mathematics and Physics, Southwest University of Science and Technology, Mianyang 621900, China;
    3 Center for High Pressure Science and Technology Advanced Research(HPSTAR), Shanghai 201203, China
  • Received:2023-10-16 Revised:2024-01-11 Accepted:2024-01-30 Online:2024-03-19 Published:2024-03-27
  • Contact: Hao Liang, Fang Peng E-mail:lh910518@126.con;pengfang@scu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 12074273) and the Sichuan Science and Technology Program (Grant No. 2022NSFSC1810).

摘要: Boron phosphide (BP) has gained significant research attention due to its unique photoelectric and mechanical properties. In this work, we investigated the stability of BP under high pressure using x-ray diffraction and scanning electron microscope. The phase diagram of BP was explored in both B-rich and P-rich environments, revealing crucial insight into its behavior at 5.0 GPa. Additionally, we measured the melting curve of BP from 8.0 GPa to 15.0 GPa. Our findings indicate that the stability of BP under high pressure is improved within B-rich and P-rich environments. Furthermore, we report a remarkable observation of melting curve frustration at 10.0 GPa. This study will enhance our understanding of stability of BP under high pressure, shedding light on its potential application in semiconductor, thermal, and light-transmitting devices.

关键词: boron phosphide, stability, melting curve, high pressure

Abstract: Boron phosphide (BP) has gained significant research attention due to its unique photoelectric and mechanical properties. In this work, we investigated the stability of BP under high pressure using x-ray diffraction and scanning electron microscope. The phase diagram of BP was explored in both B-rich and P-rich environments, revealing crucial insight into its behavior at 5.0 GPa. Additionally, we measured the melting curve of BP from 8.0 GPa to 15.0 GPa. Our findings indicate that the stability of BP under high pressure is improved within B-rich and P-rich environments. Furthermore, we report a remarkable observation of melting curve frustration at 10.0 GPa. This study will enhance our understanding of stability of BP under high pressure, shedding light on its potential application in semiconductor, thermal, and light-transmitting devices.

Key words: boron phosphide, stability, melting curve, high pressure

中图分类号:  (High-pressure effects in solids and liquids)

  • 62.50.-p
64.70.dj (Melting of specific substances) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 74.62.Bf (Effects of material synthesis, crystal structure, and chemical composition)