Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds

doi:10.1088/1674-1056/ac5989

中国物理B ›› 2022, Vol. 31 ›› Issue (5): 56201-056201.doi: 10.1088/1674-1056/ac5989

Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds

Qun Chen(陈群)¹, Juefei Wu(吴珏霏)², Tong Chen(陈统)¹, Xiaomeng Wang(王晓梦)¹, Chi Ding(丁弛)¹, Tianheng Huang(黄天衡)¹, Qing Lu(鲁清)¹, and Jian Sun(孙建)^1,†

1 National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
2 Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, Beijing 100230, China

收稿日期:2022-01-24 修回日期:2022-02-24 出版日期:2022-05-14 发布日期:2022-05-05
通讯作者: Jian Sun,E-mail:jiansun@nju.edu.cn E-mail:jiansun@nju.edu.cn
基金资助:
J.S.thanks the financial support from the National Natural Science Foundation of China (Grant Nos.12125404,11974162,and 11834006) and the Fundamental Research Funds for the Central Universities,China.The calculations were carried out using supercomputers at the High Performance Computing Center of Collaborative Innovation Center of Advanced Microstructures,the high-performance supercomputing center of Nanjing University.

Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds

Qun Chen(陈群)¹, Juefei Wu(吴珏霏)², Tong Chen(陈统)¹, Xiaomeng Wang(王晓梦)¹, Chi Ding(丁弛)¹, Tianheng Huang(黄天衡)¹, Qing Lu(鲁清)¹, and Jian Sun(孙建)^1,†

1 National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
2 Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, Beijing 100230, China

Received:2022-01-24 Revised:2022-02-24 Online:2022-05-14 Published:2022-05-05
Contact: Jian Sun,E-mail:jiansun@nju.edu.cn E-mail:jiansun@nju.edu.cn
About author:2022-3-2
Supported by:
J.S.thanks the financial support from the National Natural Science Foundation of China (Grant Nos.12125404,11974162,and 11834006) and the Fundamental Research Funds for the Central Universities,China.The calculations were carried out using supercomputers at the High Performance Computing Center of Collaborative Innovation Center of Advanced Microstructures,the high-performance supercomputing center of Nanjing University.

1. 附件.pdf(1098KB)

摘要/Abstract

摘要： Pressure is an effective and clean way to modify the electronic structures of materials, cause structural phase transitions and even induce the emergence of superconductivity. Here, we predicted several new phases of the ZrXY family at high pressures using the crystal structures search method together with first-principle calculations. In particular, the ZrGeS compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa. Electronic band structures show that all the high-pressure phases are metallic. Among these new structures, P4/nmm-II ZrGeS and P4/mmm ZrGeSe can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K, respectively. Our study provides a way to tune the structure, electronic properties, and superconducting behavior of topological materials through pressure.

关键词: high pressure, ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family, phase transition, superconducting temperature

Abstract: Pressure is an effective and clean way to modify the electronic structures of materials, cause structural phase transitions and even induce the emergence of superconductivity. Here, we predicted several new phases of the ZrXY family at high pressures using the crystal structures search method together with first-principle calculations. In particular, the ZrGeS compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa. Electronic band structures show that all the high-pressure phases are metallic. Among these new structures, P4/nmm-II ZrGeS and P4/mmm ZrGeSe can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K, respectively. Our study provides a way to tune the structure, electronic properties, and superconducting behavior of topological materials through pressure.

Key words: high pressure, ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family, phase transition, superconducting temperature

中图分类号: (Crystallographic aspects of phase transformations; pressure effects)

61.50.Ks

68.35.Gy (Mechanical properties; surface strains) 74.25.-q (Properties of superconductors)

Qun Chen(陈群), Juefei Wu(吴珏霏), Tong Chen(陈统), Xiaomeng Wang(王晓梦), Chi Ding(丁弛), Tianheng Huang(黄天衡), Qing Lu(鲁清), and Jian Sun(孙建). Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds[J]. 中国物理B, 2022, 31(5): 56201-056201.

参考文献

[1] Arnold F, Shekhar C, Wu S C, Sun Y, dos Reis R D, Kumar N, Naumann M, Ajeesh M O, Schmidt M, Grushin A G, Bardarson J H, Baenitz M, Sokolov D, Borrmann H, Nicklas M, Felser C, Hassinger E and Yan B 2016 Nat. Commun. 7 11615
[2] Liang T, Gibson Q, Ali M N, Liu M, Cava R J and Ong N P 2015 Nat. Mater. 14 280
[3] Shekhar C, Nayak A K, Sun Y, Schmidt M, Nicklas M, Leermakers I, Zeitler U, Skourski Y, Wosnitza J, Liu Z, Chen Y, Schnelle W, Borrmann H, Grin Y, Felser C and Yan B 2015 Nat. Phys. 11 645
[4] Wang Z, Zheng Y, Shen Z, Lu Y, Fang H, Sheng F, Zhou Y, Yang X, Li Y, Feng C and Xu Z A 2016 Phys. Rev. B 93 121112
[5] Huang X, Zhao L, Long Y, Wang P, Chen D, Yang Z, Liang H, Xue M, Weng H, Fang Z, Dai X and Chen G 2015 Phys. Rev. X 5 031023
[6] Xiong J, Kushwaha S, Krizan J, Liang T, Cava R J and Ong N P 2016 Europhys. Lett. 114 27002
[7] Ghimire N J, Luo Y, Neupane M, Williams D J, Bauer E D and Ronning F 2015 J. Phys.: Condens. Matter 27 152201
[8] Wang H, Wang H, Liu H, Lu H, Yang W, Jia S, Liu X J, Xie X C, Wei J and Wang J 2016 Nat. Mater. 15 38
[9] Sasaki S, Kriener M, Segawa K, Yada K, Tanaka Y, Sato M and Ando Y 2011 Phys. Rev. Lett. 107 217001
[10] Zhang J L, Zhang S J, Weng H M, Zhang W, Yang L X, Liu Q Q, Feng S M, Wang X C, Yu R C, Cao L Z, Wang L, Yang W G, Liu H Z, Zhao W Y, Zhang S C, Dai X, Fang Z and Jin C Q 2011 Proc. Natl. Acad. Sci. USA 108 24
[11] Zhang P, Wang Z, Wu X, Yaji K, Ishida Y, Kohama Y, Dai G, Sun Y, Bareille C, Kuroda K, Kondo T, Okazaki K, Kindo K, Wang X, Jin C, Hu J, Thomale R, Sumida K, Wu S, Miyamoto K, Okuda T, Ding H, Gu G D, Tamegai T, Kawakami T, Sato M and Shin S 2019 Nat. Phys. 15 41
[12] Young S M and Kane C L 2015 Phys. Rev. Lett. 115 126803
[13] Yan M, Huang H, Zhang K, Wang E, Yao W, Deng K, Wan G, Zhang H, Arita M, Yang H, Sun Z, Yao H, Wu Y, Fan S, Duan W and Zhou S 2017 Nat. Commun. 8 257
[14] Xiong J, Kushwaha S K, Liang T, Krizan J W, Hirschberger M, Wang W, Cava R J and Ong N P 2015 Science 350 413
[15] Borisenko S, Gibson Q, Evtushinsky D, Zabolotnyy V, Büchner B and Cava R J 2014 Phys. Rev. Lett. 113 027603
[16] Yang L X, Liu Z K, Sun Y, Peng H, Yang H F, Zhang T, Zhou B, Zhang Y, Guo Y F, Rahn M, Prabhakaran D, Hussain Z, Mo S K, Felser C, Yan B and Chen Y L 2015 Nat. Phys. 11 728
[17] Lv B Q, Xu N, Weng H M, Ma J Z, Richard P, Huang X C, Zhao L X, Chen G F, Matt C E, Bisti F, Strocov V N, Mesot J, Fang Z, Dai X, Qian T, Shi M and Ding H 2015 Nat. Phys. 11 724
[18] Xu S Y, Alidoust N, Belopolski I, Yuan Z, Bian G, Chang T R, Zheng H, Strocov V N, Sanchez D S, Chang G, Zhang C, Mou D, Wu Y, Huang L, Lee C C, Huang S M, Wang B, Bansil A, Jeng H T, Neupert T, Kaminski A, Lin H, Jia S and Zahid Hasan M 2015 Nat. Phys. 11 748
[19] Xu G, Weng H, Wang Z, Dai X and Fang Z 2011 Phys. Rev. Lett. 107 186806
[20] Kim H J, Kim K S, Wang J F, Sasaki M, Satoh N, Ohnishi A, Kitaura M, Yang M and Li L 2013 Phys. Rev. Lett. 111 246603
[21] Weng H, Fang C, Fang Z, Bernevig B A and Dai X 2015 Phys. Rev. X 5 011029
[22] Kim Y, Wieder B J, Kane C L and Rappe A M 2015 Phys. Rev. Lett. 115 036806
[23] Yu R, Weng H, Fang Z, Dai X and Hu X 2015 Phys. Rev. Lett. 115 036807
[24] Hu J, Tang Z, Liu J, Liu X, Zhu Y, Graf D, Myhro K, Tran S, Lau C N, Wei J and Mao Z 2016 Phys. Rev. Lett. 117 016602
[25] Yan Z and Wang Z 2016 Phys. Rev. Lett. 117 087402
[26] Wang Z, Wieder B J, Li J, Yan B and Bernevig B A 2019 Phys. Rev. Lett. 123 186401
[27] Feng B, Fu B, Kasamatsu S, Ito S, Cheng P, Liu C C, Feng Y, Wu S, Mahatha S K, Sheverdyaeva P, Moras P, Arita M, Sugino O, Chiang T C, Shimada K, Miyamoto K, Okuda T, Wu K, Chen L, Yao Y and Matsuda I 2017 Nat. Commun. 8 1007
[28] Kim K, Seo J, Lee E, Ko K T, Kim B S, Jang B G, Ok J M, Lee J, Jo Y J, Kang W, Shim J H, Kim C, Yeom H W, Il Min B, Yang B J and Kim J S 2018 Nat. Mater. 17 794
[29] Wang S S, Wu W K and Yang S Y 2019 Acta. Phys. Sin. 68 227101 (in Chinese)
[30] Bensch W, Helmer O, Muhler M, Ebert H and Knecht M 1995 J. Phys. Chem. 99 3326
[31] Salmankurt B and Duman S 2017 Philosophical Magazine 97 175
[32] Hosen M M 2018 Phys. Rev. B 97 121103(R)
[33] VanGennep D, Paul T A, Yerger C W, Weir S T, Vohra Y K and Hamlin J J 2019 Phys. Rev. B 99 085204
[34] Hu J, Zhu Y L, Graf D, Tang Z J, Liu J Y and Mao Z Q 2017 Phys. Rev. B 95 205134
[35] Chen F C, Fei Y, Li S J, Wang Q, Luo X, Yan J, Lu W J, Tong P, Song W H, Zhu X B, Zhang L, Zhou H B, Zheng F W, Zhang P, Lichtenstein A L, Katsnelson M I, Yin Y, Hao N and Sun Y P 2020 Phys. Rev. Lett. 124 236601
[36] Xu B, Zhao L X, Marsik P, Sheveleva E, Lyzwa F, Dai Y M, Chen G F, Qiu X G and Bernhard C 2018 Phys. Rev. Lett. 121 187401
[37] Lv Y Y, Zhang B B, Li X, Yao S H, Chen Y B, Zhou J, Zhang S T, Lu M H and Chen Y F 2016 Appl. Phys. Lett. 108 244101
[38] Ebad Allah J, Afonso J F, Krottenmüller M, Hu J, Zhu Y L, Mao Z Q, Kuneš J and Kuntscher C A 2019 Phys. Rev. B 99 125154
[39] Yen Y and Guo G Y 2020 Phys. Rev. B 101 064430
[40] Gu C C, Hu J, Chen X L, Guo Z P, Fu B T, Zhou Y H, An C, Zhou Y, Zhang R R, Xi C Y, Gu Q Y, Park C, Shu H Y, Yang W G, Pi L, Zhang Y H, Yao Y G, Yang Z R, Zhou J H, Sun J, Mao Z Q and Tian M L 2019 Phys. Rev. B 100 205124
[41] Sankar R, Peramaiyan G, Muthuselvam I P, Butler C J, Dimitri K, Neupane M, Rao G N, Lin M T and Chou F C 2017 Sci. Rep. 7 40603
[42] Lou R, Ma J Z, Xu Q N, Fu B B, Kong L Y, Shi Y G, Richard P, Weng H M, Fang Z, Sun S S, Wang Q, Lei H C, Qian T, Ding H and Wang S C 2016 Phys. Rev. B 93 241104
[43] Krottenmüller M, Vöst M, Unglert N, Ebad-Allah J, Eickerling G, Volkmer D, Hu J, Zhu Y L, Mao Z Q, Scherer W and Kuntscher C A 2020 Phys. Rev. B 101 081108
[44] Neupane M, Belopolski I, Hosen M M, Sanchez D S, Sankar R, Szlawska M, Xu S Y, Dimitri K, Dhakal N, Maldonado P, Oppeneer P M, Kaczorowski D, Chou F, Hasan M Z and Durakiewicz T 2016 Phys. Rev. B 93 201104
[45] Orbanić F, Novak M, Glumac Z, McCollam A, Tang L and Kokanović I 2021 Phys. Rev. B 103 045122
[46] Hong G H, Wang C W, Jiang J, Chen C, Cui S T, Yang H F, Liang A J, Liu S, Lv Y Y, Zhou J, Chen Y B, Yao S H, Lu M H, Chen Y F, Wang M X, Yang L X, Liu Z K and Chen Y L 2018 Chin. Phys. B 27 017105
[47] Singha R, Pariari A K, Satpati B and Mandal P 2017 Proc. Natl. Acad. Sci. USA 114 2468
[48] Zhou Y, Lu P, Du Y, Zhu X, Zhang G, Zhang R, Shao D, Chen X, Wang X, Tian M, Sun J, Wan X, Yang Z, Yang W, Zhang Y and Xing D 2016 Phys. Rev. Lett. 117 146402
[49] Lu P, Kim J S, Yang J, Gao H, Wu J, Shao D, Li B, Zhou D, Sun J, Akinwande D, Xing D and Lin J F 2016 Phys. Rev. B 94 224512
[50] Wu J, Feng Z, Wang J, Chen Q, Ding C, Chen T, Guo Z, Wen J, Shi Y, Xing D and Sun J 2019 Phys. Rev. B 100 060103
[51] Chen T, Gu Q, Chen Q, Wang X, Pickard C J, Needs R J, Xing D and Sun J 2020 Phys. Rev. B 101 054518
[52] Chen Y, Hu Q M and Yang R 2012 Phys. Rev. Lett. 109 157004
[53] Pal S, Arora R, Roychowdhury S, Harnagea L, Saurabh K, Shenoy S, Muthu D V S, Biswas K, Waghmare U V and Sood A K 2020 Phys. Rev. B 101 155202
[54] Ebad-Allah J, Krottenmüller M, Hu J, Zhu Y L, Mao Z Q and Kuntscher C A 2019 Phys. Rev. B 99 245133
[55] Xia K, Gao H, Liu C, Yuan J, Sun J, Wang H T and Xing D 2018 Sci. Bull. 63 817
[56] Gao H, Wang J, Han Y and Sun J 2021 Fundam. Res. 1 466
[57] Wang X, Chen T, Cogollo-Olivo B H, Ding C, Huang T, Lu Q and Sun J 2021 Phys. Rev. B 104 064104
[58] Blöchl P E 1994 Phys. Rev. B 50 17953
[59] Kresse G and Furthmüller J 1996 Comput. Mater. Sci. 6 15
[60] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[61] Momma K and Izumi F 2011 J. Appl. Crystal. 44 1272
[62] Togo A and Tanaka I 2015 Scr. Mater. 108 1
[63] Hill R 1952 Proc. Phys. Soc. A 65 349
[64] Chen X Q, Niu H, Li D and Li Y 2011 Intermetallics 19 1275
[65] Giannozzi P, Baroni S, Bonini N, Calandra M, Car R, Cavazzoni C, Ceresoli D, Chiarotti G L, Cococcioni M, Dabo I, Dal Corso A, de Gironcoli S, Fabris S, Fratesi G, Gebauer R, Gerstmann U, Gougoussis C, Kokalj A, Lazzeri M, Martin-Samos L, Marzari N, Mauri F, Mazzarello R, Paolini S, Pasquarello A, Paulatto L, Sbraccia C, Scandolo S, Sclauzero G, Seitsonen A P, Smogunov A, Umari P and Wentzcovitch R M 2009 J. Phys.: Condens. Matter 21 395502
[66] Mostofi A A, Yates J R, Lee Y S, Souza I, Vanderbilt D and Marzari N 2008 Comput. Phys. Commun. 178 685
[67] Sancho M P L, Sancho J M L, Sancho J M L and Rubio J 1985 J. Phys. F: Met. Phys. 15 851
[68] Wu Q, Zhang S, Song H F, Troyer M and Soluyanov A A 2018 Comput. Phys. Commun. 224 405
[69] Wang C and Hughbanks T 1995 Inorg. Chem. 34 5524
[70] Clarke S M, Steele B A, Kroonblawd M P, Zhang D, Kuo I F W and Stavrou E 2020 J. Phys. Chem. B 124 1
[71] Gupta S N, Singh A, Sarkar S, Muthu D V S, Sampath S, Waghmare U and Sood A K 2020 Phys. Rev. B 101 035123
[72] Yang J, Jiao Y, Han Y H and Li J 2016 Chin. Phys. Lett. 33 086201
[73] Watt J P and Peselnick L 1980 J. Appl. Phys. 51 1525
[74] McMillan W L 1968 Phys. Rev. 167 331
[75] Allen P B and Dynes R C 1975 Phys. Rev. B 12 905

Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds

Pressure-induced phase transitions in the ZrXY (X= Si, Ge, Sn;Y= S, Se, Te) family compounds

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