中国物理B ›› 2022, Vol. 31 ›› Issue (4): 44203-044203.doi: 10.1088/1674-1056/ac248e

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Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

Humberto Noverola-Gamas1,†, Luis Manuel Gaggero-Sager2, and Outmane Oubram3   

  1. 1 División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda, Cunduacán, 8660, Mexico;
    2 Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México;
    3 Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México
  • 收稿日期:2021-06-24 修回日期:2021-09-06 接受日期:2021-09-08 出版日期:2022-03-16 发布日期:2022-03-10
  • 通讯作者: Humberto Noverola-Gamas E-mail:noverola86@gmail.com

Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

Humberto Noverola-Gamas1,†, Luis Manuel Gaggero-Sager2, and Outmane Oubram3   

  1. 1 División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda, Cunduacán, 8660, Mexico;
    2 Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México;
    3 Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca, 62209, México
  • Received:2021-06-24 Revised:2021-09-06 Accepted:2021-09-08 Online:2022-03-16 Published:2022-03-10
  • Contact: Humberto Noverola-Gamas E-mail:noverola86@gmail.com

摘要: The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas-Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.

关键词: delta-doping, n-type GaAs layers, electronic structure, non-linear optical properties

Abstract: The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas-Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.

Key words: delta-doping, n-type GaAs layers, electronic structure, non-linear optical properties

中图分类号:  (Nonlinear optics)

  • 42.65.-k
64.70.Tg (Quantum phase transitions) 42.70.Nq (Other nonlinear optical materials; photorefractive and semiconductor materials)