Magnetic two-dimensional van der Waals materials forspintronic devices

doi:10.1088/1674-1056/ac2808

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 118504-118504.doi: 10.1088/1674-1056/ac2808

所属专题： SPECIAL TOPIC — Two-dimensional magnetic materials and devices

Magnetic two-dimensional van der Waals materials forspintronic devices

Yu Zhang(张雨)^1,2, Hongjun Xu(许洪军)^1,3, Jiafeng Feng(丰家峰)^1,2, Hao Wu(吴昊)^3,†, Guoqiang Yu(于国强)^1,2,3,‡, and Xiufeng Han(韩秀峰)^1,2,3

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2021-07-15 修回日期:2021-09-15 接受日期:2021-09-18 出版日期:2021-10-13 发布日期:2021-10-27
通讯作者: Hao Wu, Guoqiang Yu E-mail:wuhaoiphy@gmail.com;guoqiangyu@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0206200), the National Natural Science Foundation of China (Grant No. 11874409), the Beijing Natural Science Foundation, China (Grant No. Z190009), the Science Center of the National Science Foundation of China (Grant No. 52088101), and the K. C. Wong Education Foundation (Grant No. GJTD-2019-14).

Magnetic two-dimensional van der Waals materials forspintronic devices

Yu Zhang(张雨)^1,2, Hongjun Xu(许洪军)^1,3, Jiafeng Feng(丰家峰)^1,2, Hao Wu(吴昊)^3,†, Guoqiang Yu(于国强)^1,2,3,‡, and Xiufeng Han(韩秀峰)^1,2,3

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2021-07-15 Revised:2021-09-15 Accepted:2021-09-18 Online:2021-10-13 Published:2021-10-27
Contact: Hao Wu, Guoqiang Yu E-mail:wuhaoiphy@gmail.com;guoqiangyu@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0206200), the National Natural Science Foundation of China (Grant No. 11874409), the Beijing Natural Science Foundation, China (Grant No. Z190009), the Science Center of the National Science Foundation of China (Grant No. 52088101), and the K. C. Wong Education Foundation (Grant No. GJTD-2019-14).

摘要/Abstract

摘要： Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.

关键词: magnetic two-dimensional van der Waals materials, spintronic devices

Abstract: Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.

Key words: magnetic two-dimensional van der Waals materials, spintronic devices

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

Yu Zhang(张雨), Hongjun Xu(许洪军), Jiafeng Feng(丰家峰), Hao Wu(吴昊), Guoqiang Yu(于国强), and Xiufeng Han(韩秀峰). Magnetic two-dimensional van der Waals materials forspintronic devices[J]. 中国物理B, 2021, 30(11): 118504-118504.

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Magnetic two-dimensional van der Waals materials forspintronic devices

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