中国物理B ›› 2021, Vol. 30 ›› Issue (1): 16202-.doi: 10.1088/1674-1056/abc4dd

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  • 收稿日期:2020-09-10 修回日期:2020-10-19 接受日期:2020-10-27 出版日期:2020-12-17 发布日期:2020-12-17

Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn0.98Al0.02O with excellent electrical properties

Qi Chen(陈启)1, Xinjian Li(李欣健)1, Yao Wang(王遥)1, Lijie Chang(常立杰)1, Jian Wang(王健)1, Yuewen Zhang(张跃文)2,†, Hongan Ma(马红安)1,‡, and Xiaopeng Jia(贾晓鹏)1   

  1. 1 State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China; 2 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microeletronics, Zhengzhou University, Zhengzhou 450052, China
  • Received:2020-09-10 Revised:2020-10-19 Accepted:2020-10-27 Online:2020-12-17 Published:2020-12-17
  • Contact: †Corresponding author. E-mail: zhangyw@zzu.edu.cn ‡Corresponding author. E-mail: maha@jlu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51171070) and the Project of Jilin Science and Technology Development Plan, China (Grant No. 20170101045JC).

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Abstract: The temperature in the high-pressure high-temperature (HPHT) synthesis is optimized to enhance the thermoelectric properties of high-density ZnO ceramic, Zn0.98Al0.02O. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy show that HPHT can be utilized to control the crystal structure and relative density of the material. High pressure can be utilized to change the energy band structure of the samples via changing the lattice constant of samples, which decreases the thermal conductivity due to the formation of a multi-scale hierarchical structure and defects. The electrical conductivity of the material reaches 6× 104 S/m at 373 K, and all doped samples behave as n-type semiconductors. The highest power factor (6.42 μ W cm - 1K -2) and dimensionless figure of merit (zT=0.09) are obtained when Zn0.98Al0.02O is produced at 973 K using HPHT, which is superior to previously reported power factors for similar materials at the same temperature. Hall measurements indicate a high carrier concentration, which is the reason for the enhanced electrical performance.

Key words: high pressure and high temperature, icrostructure, Al-doped ZnO, thermoelectric

中图分类号:  (High-pressure effects in solids and liquids)

  • 62.50.-p
72.15.Jf (Thermoelectric and thermomagnetic effects) 72.15.Lh (Relaxation times and mean free paths)