Growth and structural characteristics of metastable β-In2Se3 thin films on H-terminated Si(111) substrates by molecular beam epitaxy

doi:10.1088/1674-1056/ab820f

中国物理B ›› 2020, Vol. 29 ›› Issue (5): 56402-056402.doi: 10.1088/1674-1056/ab820f

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Yi-Fan Shen(沈逸凡), Xi-Bo Yin(尹锡波), Chao-Fan Xu(徐超凡), Jing He(贺靖), Jun-Ye Li(李俊烨), Han-Dong Li(李含冬), Xiao-Hong Zhu(朱小红), Xiao-Bin Niu(牛晓滨)

1 College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;
2 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2020-01-31 修回日期:2020-03-14 出版日期:2020-05-05 发布日期:2020-05-05
通讯作者: Han-Dong Li, Xiao-Hong Zhu E-mail:hdli@uestc.edu.cn;xhzhu@scu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant Nos. 61474014 and U1601208), and the Sichuan Science and Technology Program, China (Grant Nos. 2019YJ0202 and 20GJHZ0229).

Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Yi-Fan Shen(沈逸凡)¹, Xi-Bo Yin(尹锡波)², Chao-Fan Xu(徐超凡)², Jing He(贺靖)², Jun-Ye Li(李俊烨)², Han-Dong Li(李含冬)², Xiao-Hong Zhu(朱小红)¹, Xiao-Bin Niu(牛晓滨)²

1 College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China;
2 School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2020-01-31 Revised:2020-03-14 Online:2020-05-05 Published:2020-05-05
Contact: Han-Dong Li, Xiao-Hong Zhu E-mail:hdli@uestc.edu.cn;xhzhu@scu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0306102 and 2018YFA0306703), the National Natural Science Foundation of China (Grant Nos. 61474014 and U1601208), and the Sichuan Science and Technology Program, China (Grant Nos. 2019YJ0202 and 20GJHZ0229).

摘要/Abstract

摘要： Epitaxial growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates are studied. The In₂Se₃ thin films grown below the β-to-α phase transition temperature (453 K) are characterized to be strained β-In₂Se₃ mixed with significant γ-In₂Se₃ phases. The pure-phased single-crystalline β-In₂Se₃ can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In₂Se₃ within the phase equilibrium temperature window of β-In₂Se₃. It is suggeted that the observed γ-to-β phase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In₂Se₃ thin-film system at a state far from thermodynamic equilibrium.

关键词: In₂Se₃, molecular beam epitaxy, single-crystalline, annealing and quench, phase transition

Abstract: Epitaxial growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates are studied. The In₂Se₃ thin films grown below the β-to-α phase transition temperature (453 K) are characterized to be strained β-In₂Se₃ mixed with significant γ-In₂Se₃ phases. The pure-phased single-crystalline β-In₂Se₃ can be reproducibly achieved by in situ annealing the as-deposited poly-crystalline In₂Se₃ within the phase equilibrium temperature window of β-In₂Se₃. It is suggeted that the observed γ-to-β phase transition triggered by quite a low annealing temperature should be a rather lowered phase transition barrier of the epitaxy-stabilized In₂Se₃ thin-film system at a state far from thermodynamic equilibrium.

Key words: In₂Se₃, molecular beam epitaxy, single-crystalline, annealing and quench, phase transition

中图分类号: (Metastable phases)

64.60.My

68.55.-a (Thin film structure and morphology) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.35.Gy (Mechanical properties; surface strains)

沈逸凡, 尹锡波, 徐超凡, 贺靖, 李俊烨, 李含冬, 朱小红, 牛晓滨. Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy[J]. 中国物理B, 2020, 29(5): 56402-056402.

Yi-Fan Shen(沈逸凡), Xi-Bo Yin(尹锡波), Chao-Fan Xu(徐超凡), Jing He(贺靖), Jun-Ye Li(李俊烨), Han-Dong Li(李含冬), Xiao-Hong Zhu(朱小红), Xiao-Bin Niu(牛晓滨). Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy[J]. Chin. Phys. B, 2020, 29(5): 56402-056402.

参考文献 32

[1]	Han G, Chen Z G, Drennan J and Zou J 2014 Small 10 2747 doi: 10.1002/smll.201400104
[2]	Island J O, Blanter S I, Buscema M, Van der Zant H S J and Castellanos-Gomez A 2015 Nano Lett. 15 7853 doi: 10.1021/acs.nanolett.5b02523
[3]	Jacobs-Gedrim R B, Shanmugam M, Jain N, Durcan C A, Murphy M T, Murray T M, Matyi R J, Moore R L and Yu B 2014 ACS Nano 8 514 doi: 10.1021/nn405037s
[4]	Ding W J, Zhu J B, Wang Z, Gao Y F, Xiao D, Gu Y, Zhang Z Y and Zhu W G 2017 Nat. Commun. 8 14956 doi: 10.1038/ncomms14956
[5]	Cui C J, Hu W J, Yan X X, Addiego C, Gao W P, Wang Y, Wang Z, Li L Z, Cheng Y C, Li P, Zhang X X, Alshareef H N, Wu T, Zhu W G, Pan X Q and Li L J 2018 Nano Lett. 18 1253 doi: 10.1021/acs.nanolett.7b04852
[6]	Poh S M, Tan S J R, Wang H, Song P, Abidi I H, Zhao X X, Dan J D, Chen J S, Luo Z T, Pennycook S J, Castro Neto A H and Loh K P 2018 Nano Lett. 18 6340 doi: 10.1021/acs.nanolett.8b02688
[7]	Zhai T Y, Fang X S, Liao M Y, Xu X J, Li L, Liu B D, Koide Y, Ma Y, Yao J N, Bando Y and Golberg D 2010 ACS Nano 4 1596 doi: 10.1021/nn9012466
[8]	Ho C H, Lin C H, Wang Y P, Chen Y C, Chen S H and Huang Y S 2013 ACS Appl. Mater. Interfaces 5 2269 doi: 10.1021/am400128e
[9]	Li Q L, Liu C H, Nie Y T, Chen W H, Gao X, Sun X H and Wang S D 2014 Nanoscale 6 14538 doi: 10.1039/C4NR04404E
[10]	Li H D, Ren W Y, Wang G Y, Gao L, Peng R M, Li H, Zhang P Y, Shafa M, Tong X, Luo S Y, Zhou Z H, Ji H N, Wu J, Niu X B and Wang Z M 2016 J. Phys. D: Appl. Phys. 49 145108 doi: 10.1088/0022-3727/49/14/145108
[11]	Chen J, Du G and Liu X Y 2015 Chin. Phys. B 24 057702 doi: 10.1088/1674-1056/24/5/057702
[12]	Choi M S, Cheong B K, Ra C H, Lee S, Bae J H, Lee S, Lee G D, Yang C W, Hone J and Yoo W J 2017 Adv. Mater. 29 1703568 doi: 10.1002/adma.201703568
[13]	Pandiana M, Matheswarana P, Gokul B, Sathyamoorthy R and Asokan K 2018 Appl. Surf. Sci. 449 55 doi: 10.1016/j.apsusc.2018.01.027
[14]	Lee H, Kang D H and Tran L 2005 Mater. Sci. Eng. B 119 196 doi: 10.1016/j.mseb.2005.02.060
[15]	Jin B, Kang D, Kim J, Meyyappan M and Lee J S 2013 J. Appl. Phys. 113 164303 doi: 10.1063/1.4802672
[16]	Wu G J, Wang X D, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J L, Zhang S T, Bian L F, Sun J L, Meng X J and Chu J H 2016 Nanotechnology 27 364002 doi: 10.1088/0957-4484/27/36/364002
[17]	Zheng Z Q, Yao J D and Yang G W 2017 ACS Appl. Mater. Interfaces 9 7288 doi: 10.1021/acsami.6b16323
[18]	Feng W, Gao F, Hu Y X, Dai M J, Liu H, Wang L F and Hu P A 2018 ACS Appl. Mater. Interfaces 10 27584 doi: 10.1021/acsami.8b10194
[19]	Chaiken A, Nauka K, Gibson G A, Lee H, Yang C C, Wu J, Ager J W, Yu K M and Walukiewicz W 2003 J. Appl. Phys. 94 2390 doi: 10.1063/1.1592631
[20]	Okamoto T, Yamada A and Konagai M 1997 J. Cryst. Growth 175-176 1045 doi: 10.1016/S0022-0248(96)00984-0
[21]	Zheng Z Q, Yao J D, Xiao J and Yang G W 2016 J. Mater. Chem. C 4 8094 doi: 10.1039/C6TC02296K
[22]	Balakrishnan N, Staddon C R, Smith E F, Stec J, Gay D, Mudd G W, Makarovsky O, Kudrynskyi Z R, Kovalyuk Z D, Eaves L, PatanéA and Beton P H 2016 2D Mater. 3 025030 doi: 10.1088/2053-1583/3/2/025030
[23]	Zhou S, Tao X and Gu Y 2016 J. Phys. Chem. C 120 4753 doi: 10.1021/acs.jpcc.5b10905
[24]	Ren W Y, Li H D, Gao L, Li Y, Zhang Z Y, Long C J, Ji H N, Niu X B, Lin Y and Wang Z W 2017 Nano Res. 10 247 doi: 10.1007/s12274-016-1282-8
[25]	Li H D, Yu S P, Li Y, Channa A I, Ji H N, Wu J, Niu X B and Wang Z M 2019 Appl. Phys. Lett. 115 041602 doi: 10.1063/1.5099906
[26]	Li H D, Wang Z Y, Guo X, Wong T L, Wang N and Xie M H 2011 Appl. Phys. Lett. 98 043104 doi: 10.1063/1.3548865
[27]	Yuan Y F, Cao X R, Sun Y, Su J, Liu C M, Cheng L, Yuan L H, Zhang H and Li J 2017 RSC Adv. 7 46431 doi: 10.1039/C7RA08438B
[28]	Zhang F, Wang Z, Dong J Y, Nie A M, Xiang J Y, Zhu W G, Liu Z Y and Tao C G 2019 ACS Nano 13 8004 doi: 10.1021/acsnano.9b02764
[29]	Ke F, Liu C L, Gao Y, Zhang J K, Tan D Y, Han Y H, Ma Y Z, Shu J F, Yang W G, Chen B, Mao H K, Chen X J and Gao C X 2014 Appl. Phys. Lett. 104 212102 doi: 10.1063/1.4879832
[30]	Rasmussen A M, Mafi E, Zhu W G, Gu Y and McCluskey M D 2016 High Press. Res. 36 549 doi: 10.1080/08957959.2016.1214729
[31]	Huang Y P, Huang X L, Wang X, Zhang W T, Zhou D, Zhou Q, Liu B B and Cui T 2019 Chin. Phys. B 28 096402 doi: 10.1088/1674-1056/ab37f8
[32]	Li H D, Zhang X N, Zhang Z, Mei Z X, Du X L and Xue Q K 2007 J. Appl. Phys. 101 106102 doi: 10.1063/1.2732411

Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy

Growth and structural characteristics of metastable β-In₂Se₃ thin films on H-terminated Si(111) substrates by molecular beam epitaxy

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 32

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Chao Ning(宁超), Tian Yu(于天), Rui-Xuan Sun(孙瑞轩), Shu-Man Liu(刘舒曼), Xiao-Ling Ye(叶小玲), Ning Zhuo(卓宁), Li-Jun Wang(王利军), Jun-Qi Liu(刘俊岐), Jin-Chuan Zhang(张锦川), Shen-Qiang Zhai(翟慎强), and Feng-Qi Liu(刘峰奇). Strain compensated type II superlattices grown by molecular beam epitaxy[J]. 中国物理B, 2023, 32(4): 46802-046802.
[2]	Chenjun Zhang(张晨骏), Xiaoke He(何小可), Zhiyu Min(闵志宇), and Baozhong Li(李保忠). Tailoring of thermal expansion and phase transition temperature of ZrW₂O₈ with phosphorus and enhancement of negative thermal expansion of ZrW_1.5P_0.5O_7.75[J]. 中国物理B, 2023, 32(4): 48201-048201.
[3]	Fuzhong Nian(年福忠) and Xia Zhang(张霞). Topological phase transition in network spreading[J]. 中国物理B, 2023, 32(3): 38901-038901.
[4]	Di Zhang(张迪), Yunrui Duan(段云瑞), Peiru Zheng(郑培儒), Yingjie Ma(马英杰), Junping Qian(钱俊平), Zhichao Li(李志超), Jian Huang(黄建), Yanyan Jiang(蒋妍彦), and Hui Li(李辉). Liquid-liquid phase transition in confined liquid titanium[J]. 中国物理B, 2023, 32(2): 26801-026801.
[5]	Tina Raoufi, Jincheng He(何金城), Binbin Wang(王彬彬), Enke Liu(刘恩克), and Young Sun(孙阳). Magnetocaloric properties and Griffiths phase of ferrimagnetic cobaltite CaBaCo₄O₇[J]. 中国物理B, 2023, 32(1): 17504-017504.
[6]	Long Zhou(周龙), Xu-Long Zhang(张旭龙), Yu-Ying Cao(曹玉莹), Fu Zheng(郑富), Hua Gao(高华), Hong-Fei Liu(刘红飞), and Zhi Ma(马治). Prediction of flexoelectricity in BaTiO₃ using molecular dynamics simulations[J]. 中国物理B, 2023, 32(1): 17701-017701.
[7]	Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801.
[8]	Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Selective formation of ultrathin PbSe on Ag(111)[J]. 中国物理B, 2022, 31(9): 96801-096801.
[9]	Wei Hu(胡伟), Wen-Wei Luo(罗文崴), Mu-Sheng Wu(吴木生), Bo Xu(徐波), and Chu-Ying Ouyang(欧阳楚英). Configurational entropy-induced phase transition in spinel LiMn₂O₄[J]. 中国物理B, 2022, 31(9): 98202-098202.
[10]	Yong-Huan Wang(王永欢), Yun Zhang(张云), Yu Liu(刘瑜), Xiao Tan(谈笑), Ce Ma(马策), Yue-Chao Wang(王越超), Qiang Zhang(张强), Deng-Peng Yuan(袁登鹏), Dan Jian(简单), Jian Wu(吴健), Chao Lai(赖超), Xi-Yang Wang(王西洋), Xue-Bing Luo(罗学兵), Qiu-Yun Chen(陈秋云), Wei Feng(冯卫), Qin Liu(刘琴), Qun-Qing Hao(郝群庆), Yi Liu(刘毅), Shi-Yong Tan(谭世勇), Xie-Gang Zhu(朱燮刚), Hai-Feng Song(宋海峰), and Xin-Chun Lai(赖新春). Effect of f-c hybridization on the $\gamma\to \alpha$ phase transition of cerium studied by lanthanum doping[J]. 中国物理B, 2022, 31(8): 87102-087102.
[11]	Jianfei Chen(陈健菲), Chaohua Wu(吴超华), Jingtao Fan(樊景涛), and Gang Chen(陈刚). Characterization of topological phase of superlattices in superconducting circuits[J]. 中国物理B, 2022, 31(8): 88501-088501.
[12]	Xin Guan(关欣), Gang Chen(陈刚), Jing Pan(潘婧), and Zhi-Guo Gui(桂志国). Hard-core Hall tube in superconducting circuits[J]. 中国物理B, 2022, 31(8): 80302-080302.
[13]	Qingrong Shao(邵倾蓉), Jing Meng(孟婧), Xiaoyan Zhu(朱晓艳), Yali Xie(谢亚丽), Wenjuan Cheng(程文娟), Dongmei Jiang(蒋冬梅), Yang Xu(徐杨), Tian Shang(商恬), and Qingfeng Zhan(詹清峰). Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO₃(001)[J]. 中国物理B, 2022, 31(8): 87503-087503.
[14]	Wen-Ji Shen(沈文吉), Tian-Xiao Liang(梁天笑), Zhao Liu(刘召), Xin Wang(王鑫), De-Fang Duan(段德芳), Hong-Yu Yu(于洪雨), and Tian Cui(崔田). Structural evolution and molecular dissociation of H₂S under high pressures[J]. 中国物理B, 2022, 31(7): 76102-076102.
[15]	Hengli Xie(谢恒立), Jiaxiang Wang(王家祥), Lingrui Wang(王玲瑞), Yong Yan(闫勇), Juan Guo(郭娟), Qilong Gao(高其龙), Mingju Chao(晁明举), Erjun Liang(梁二军), and Xiao Ren(任霄). Structural evolution and bandgap modulation of layered β-GeSe₂ single crystal under high pressure[J]. 中国物理B, 2022, 31(7): 76101-076101.