Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

doi:10.1088/1674-1056/aba60a

中国物理B ›› 2020, Vol. 29 ›› Issue (11): 118501-.doi: 10.1088/1674-1056/aba60a

Zhang Zhou(周璋)¹^,², Liangmei Wu(吴良妹)¹^,², Jiancui Chen(陈建翠)¹^,², Jiajun Ma(马佳俊)¹^,², Yuan Huang(黄元)¹, Chengmin Shen(申承民)¹^,²^,³, Lihong Bao(鲍丽宏)¹^,²^,³^,†(), 鸿钧高¹^,²^,³^,^‡()

收稿日期:2020-05-15 修回日期:2020-07-05 接受日期:2020-07-15 出版日期:2020-11-05 发布日期:2020-11-03

Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

Zhang Zhou(周璋)^1,2, Liangmei Wu(吴良妹)^1,2, Jiancui Chen(陈建翠)^1,2, Jiajun Ma(马佳俊)^1,2, Yuan Huang(黄元)¹, Chengmin Shen(申承民)^1,2,3, Lihong Bao(鲍丽宏)^{1,2,3, †}, and Hong-Jun Gao(高鸿钧)^{1,2,3,, ‡}

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2 University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, China
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2020-05-15 Revised:2020-07-05 Accepted:2020-07-15 Online:2020-11-05 Published:2020-11-03
Contact: ^†Corresponding author. E-mail: lhbao@iphy.ac.cn ^‡Corresponding author. E-mail: hjgao@iphy.ac.cn
Supported by:
the National Key Research and Development Projects of China (Grant Nos. 2016YFA0202300 and 2018FYA0305800), the National Natural Science Foundation of China (Grant Nos. 61674170 and 61888102), the K. C. Wong Education Foundation, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. Y201902).

摘要/Abstract

Abstract:

We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor. The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as ∼1 V and steep subthreshold swing (83 mV/dec). The p-type conduction behavior of InSe is obtained when negative gate voltages are biased. Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride (h-BN) between InSe and the solid-ion-conductor substrate. By comparing the performance of devices with and without h-BN, the capacitance of solid ion conductors is extracted to be the same as that of ∼2 nm h-BN, and the mobility of InSe on solid ion conductors is comparable to that on the SiO₂ substrate. Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

Key words: solid ion conductors, electrostatic gating, InSe, van der Waals heterostructure

Zhang Zhou(周璋), Liangmei Wu(吴良妹), Jiancui Chen(陈建翠), Jiajun Ma(马佳俊), Yuan Huang(黄元), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), 鸿钧高. [J]. 中国物理B, 2020, 29(11): 118501-.

Zhang Zhou(周璋), Liangmei Wu(吴良妹), Jiancui Chen(陈建翠), Jiajun Ma(马佳俊), Yuan Huang(黄元), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧). Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures[J]. Chin. Phys. B, 2020, 29(11): 118501-.

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Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

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