Optical and electrical properties of InGaZnON thin films

doi:10.1088/1674-1056/ab5fc1

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 18105-018105.doi: 10.1088/1674-1056/ab5fc1

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Optical and electrical properties of InGaZnON thin films

Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China

收稿日期:2019-08-29 修回日期:2019-10-10 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Fan Ye E-mail:yefan@szu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).

Optical and electrical properties of InGaZnON thin films

Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平)

Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China

Received:2019-08-29 Revised:2019-10-10 Online:2020-01-05 Published:2020-01-05
Contact: Fan Ye E-mail:yefan@szu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).

摘要/Abstract

摘要： The substrate temperature (T_s) and N₂ partial pressure (P_N2) dependent optical and electrical properties of sputtered InGaZnON thin films are studied. With the increased T_s and P_N2, the thin film becomes more crystallized and nitrified. The Hall mobility, free carrier concentration (N_e), and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing. The photoluminescence (PL) intensity decreases with the increased N_e. The band gap (E_g) narrows and the linear refractive index (n₁) increases with the increasing concentration of N in the thin films. The Stokes shift between the PL peak and absorption edge decreases with E_g. The n₁, dispersion energy, average oscillator wavelength, and oscillator length strength all increase with n₁. The single oscillator energy decreases with n₁. The nonlinear refractive index and third order optical susceptibility increase with n₁. The Seebeck coefficient, electron effective mass, mean free path, scattering time, and plasma energy are all N_e dependent.

关键词: InGaZnON thin films, linear and nonlinear optical properties, Seebeck coefficient, electron effective mass

Abstract: The substrate temperature (T_s) and N₂ partial pressure (P_N2) dependent optical and electrical properties of sputtered InGaZnON thin films are studied. With the increased T_s and P_N2, the thin film becomes more crystallized and nitrified. The Hall mobility, free carrier concentration (N_e), and electrical conductivity increase with the lowered interfacial potential barrier during crystal growing. The photoluminescence (PL) intensity decreases with the increased N_e. The band gap (E_g) narrows and the linear refractive index (n₁) increases with the increasing concentration of N in the thin films. The Stokes shift between the PL peak and absorption edge decreases with E_g. The n₁, dispersion energy, average oscillator wavelength, and oscillator length strength all increase with n₁. The single oscillator energy decreases with n₁. The nonlinear refractive index and third order optical susceptibility increase with n₁. The Seebeck coefficient, electron effective mass, mean free path, scattering time, and plasma energy are all N_e dependent.

Key words: InGaZnON thin films, linear and nonlinear optical properties, Seebeck coefficient, electron effective mass

中图分类号: (Other semiconductors)

81.05.Hd

78.66.-w (Optical properties of specific thin films) 73.61.-r (Electrical properties of specific thin films)

姚建可, 叶凡, 范平. Optical and electrical properties of InGaZnON thin films[J]. 中国物理B, 2020, 29(1): 18105-018105.

Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平). Optical and electrical properties of InGaZnON thin films[J]. Chin. Phys. B, 2020, 29(1): 18105-018105.

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Optical and electrical properties of InGaZnON thin films

Optical and electrical properties of InGaZnON thin films

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