Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

doi:10.1088/1674-1056/28/7/078106

中国物理B ›› 2019, Vol. 28 ›› Issue (7): 78106-078106.doi: 10.1088/1674-1056/28/7/078106

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

Hong-Ping Yang(杨宏平), Wen-Juan Yuan(原文娟), Jun Luo(罗俊), Jing Zhu(朱静)

1 National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, the State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials(MOE), Tsinghua University, Beijing 100084, China;
2 Center for Electron Microscopy, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

收稿日期:2019-02-24 修回日期:2019-04-26 出版日期:2019-07-05 发布日期:2019-07-05
通讯作者: Wen-Juan Yuan, Jing Zhu E-mail:yuanwj@email.tjut.edu.cn;jzhu@mail.tsinghua.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374174, 51390471, 51527803, and 51701143), the National Basic Research Program of China (Grant No. 2015CB654902), the National Key Research and Development Program of China (Grant No. 2016YFB0700402), the Foundation for the Author of National Excellent Doctoral Dissertation, China (Grant No. 201141), the Tianjin Municipal Education Commission, China, the Tianjin Municipal Science and Technology Commission, China, and the Fundamental Research Fund of Tianjin University of Technology. This work made use of the resources of the National Center for Electron Microscopy in Beijing and Tsinghua National Laboratory for Information Science and Technology.

Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

Hong-Ping Yang(杨宏平)¹, Wen-Juan Yuan(原文娟)², Jun Luo(罗俊)², Jing Zhu(朱静)¹

1 National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, the State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials(MOE), Tsinghua University, Beijing 100084, China;
2 Center for Electron Microscopy, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Received:2019-02-24 Revised:2019-04-26 Online:2019-07-05 Published:2019-07-05
Contact: Wen-Juan Yuan, Jing Zhu E-mail:yuanwj@email.tjut.edu.cn;jzhu@mail.tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374174, 51390471, 51527803, and 51701143), the National Basic Research Program of China (Grant No. 2015CB654902), the National Key Research and Development Program of China (Grant No. 2016YFB0700402), the Foundation for the Author of National Excellent Doctoral Dissertation, China (Grant No. 201141), the Tianjin Municipal Education Commission, China, the Tianjin Municipal Science and Technology Commission, China, and the Fundamental Research Fund of Tianjin University of Technology. This work made use of the resources of the National Center for Electron Microscopy in Beijing and Tsinghua National Laboratory for Information Science and Technology.

摘要/Abstract

摘要：

Bilayer graphene quantum dots with rotational stacking faults (RSFs) having different rotational angles were studied. Using the first-principles calculation, we determined that these stacking faults could quantitatively modulate the magnetism and the distribution of spin and energy levels in the electronic structures of the dots. In addition, by examining the spatial distribution of unpaired spins and Bader charge analysis, we found that the main source of magnetic moment originated from the edge atoms of the quantum dots. Our research results can potentially provide a new path for producing all-carbon nanodevices with different electrical and magnetic properties.

关键词: bilayer graphene quantum dots, rotational stacking faults, first-principles calculation

Abstract:

Key words: bilayer graphene quantum dots, rotational stacking faults, first-principles calculation

中图分类号: (Fullerenes and related materials)

81.05.ub

81.05.ue (Graphene) 31.15.E (Density-functional theory)

杨宏平, 原文娟, 罗俊, 朱静. Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults[J]. 中国物理B, 2019, 28(7): 78106-078106.

Hong-Ping Yang(杨宏平), Wen-Juan Yuan(原文娟), Jun Luo(罗俊), Jing Zhu(朱静). Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults[J]. Chin. Phys. B, 2019, 28(7): 78106-078106.

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Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults

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