中国物理B ›› 2017, Vol. 26 ›› Issue (4): 46402-046402.doi: 10.1088/1674-1056/26/4/046402

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Low-temperature phase transformation of CZTS thin films

Wei Zhao(赵蔚), Lin-Yuan Du(杜霖元), Lin-Lin Liu(刘林林), Ya-Li Sun(孙亚利), Zhi-Wei Liu(柳志伟), Xiao-Yun Teng(滕晓云), Juan Xie(谢娟), Kuang Liu(刘匡), Wei Yu(于威), Guang-Sheng Fu(傅广生), Chao Gao(高超)   

  1. 1 Hebei Key Laboratory of Optic-electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China;
    2 School of Science, Hebei University of Engineering, Handan 056038, China;
    3 School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    4 Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
  • 收稿日期:2016-12-04 修回日期:2017-02-13 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: Wei Yu, Guang-Sheng Fu, Chao Gao E-mail:yuwei@hbu.edu.cn;fugs@hbu.edu.cn;cgao@ncu.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation for Youth Fund of Hebei Province, China (Grant No. A2016201087), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131301120003), and the National Natural Science Foundation of China (Grant Nos. 11504078 and 61504054).

Low-temperature phase transformation of CZTS thin films

Wei Zhao(赵蔚)1,2, Lin-Yuan Du(杜霖元)1, Lin-Lin Liu(刘林林)1, Ya-Li Sun(孙亚利)1, Zhi-Wei Liu(柳志伟)1, Xiao-Yun Teng(滕晓云)1, Juan Xie(谢娟)2, Kuang Liu(刘匡)3, Wei Yu(于威)1, Guang-Sheng Fu(傅广生)1, Chao Gao(高超)4   

  1. 1 Hebei Key Laboratory of Optic-electronic Information Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China;
    2 School of Science, Hebei University of Engineering, Handan 056038, China;
    3 School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    4 Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
  • Received:2016-12-04 Revised:2017-02-13 Online:2017-04-05 Published:2017-04-05
  • Contact: Wei Yu, Guang-Sheng Fu, Chao Gao E-mail:yuwei@hbu.edu.cn;fugs@hbu.edu.cn;cgao@ncu.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation for Youth Fund of Hebei Province, China (Grant No. A2016201087), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131301120003), and the National Natural Science Foundation of China (Grant Nos. 11504078 and 61504054).

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摘要： The low temperature phase transformation in the Cu2ZnSnS4 (CZTS) films was investigated by laser annealing and low temperature thermal annealing. The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite (KS) structure and promotes the formation of the partially disordered kesterite (PD-KS) structure in the CZTS films, and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region. Moreover, the above two processes were reversible. The Raman analyses of the CZTS samples prepared under different process show that the PD-KS structure tends to be found at low temperatures and low sulfur vapor pressures. Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films.

关键词: Cu2ZnSnS4 (CZTS) films, magnetron sputtering, phase transformation

Abstract: The low temperature phase transformation in the Cu2ZnSnS4 (CZTS) films was investigated by laser annealing and low temperature thermal annealing. The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite (KS) structure and promotes the formation of the partially disordered kesterite (PD-KS) structure in the CZTS films, and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region. Moreover, the above two processes were reversible. The Raman analyses of the CZTS samples prepared under different process show that the PD-KS structure tends to be found at low temperatures and low sulfur vapor pressures. Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films.

Key words: Cu2ZnSnS4 (CZTS) films, magnetron sputtering, phase transformation

中图分类号:  (General studies of phase transitions)

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