中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27202-027202.doi: 10.1088/1674-1056/25/2/027202
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Song-Qing Zhao(赵嵩卿), Ji-Rui Zhang(张际蕊), Hong-Jie Shi(施宏杰), Kun-Kun Yan(闫坤坤), Chun Huang(黄春), Li-Min Yang(杨立敏), Rui Yang(杨睿), Kun Zhao(赵昆)
Song-Qing Zhao(赵嵩卿)1,2,3,4,5, Ji-Rui Zhang(张际蕊)5, Hong-Jie Shi(施宏杰)5, Kun-Kun Yan(闫坤坤)5, Chun Huang(黄春)2, Li-Min Yang(杨立敏)1,2,3,4,5, Rui Yang(杨睿)5, Kun Zhao(赵昆)1,2,3,4,5
摘要: The SnO2/SnO with an orthorhombic structure is a material known to be stable at high pressures and temperatures and expected to have new optical and electrical properties. The authors report a new finding of the infrared laser induced a fast photovoltaic effect arising from orthorhombic tin oxide film with an indirect band gap (~ 2.4 eV) which is deposited by pulsed laser deposition. The rising time of the photovoltaic signal is about 3 ns with a peak value of 4.48 mV under the pulsed laser beam with energy density 0.015 mJ/mm2. The relation between the photovoltages and laser positions along the line between two electrodes of the film is also exhibited. A possible mechanism is put forward to explain this phenomenon. All data and analyses demonstrate that the orthorhombic tin oxide with an indirect band gap could be used as a candidate for an infrared photodetector which can be operated at high pressures and temperatures.
中图分类号: (Photoconduction and photovoltaic effects)