中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128402-128402.doi: 10.1088/1674-1056/25/12/128402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Modeling and experimental studies of a side band power re-injection locked magnetron

Wen-Jun Ye(叶文军), Yi Zhang(张益), Ping Yuan(袁萍), Hua-Cheng Zhu(朱铧丞), Ka-Ma Huang(黄卡玛), Yang Yang(杨阳)   

  1. College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, China
  • 收稿日期:2016-05-23 修回日期:2016-08-17 出版日期:2016-12-05 发布日期:2016-12-05
  • 通讯作者: Yang Yang E-mail:yyang@scu.edu.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

Modeling and experimental studies of a side band power re-injection locked magnetron

Wen-Jun Ye(叶文军), Yi Zhang(张益), Ping Yuan(袁萍), Hua-Cheng Zhu(朱铧丞), Ka-Ma Huang(黄卡玛), Yang Yang(杨阳)   

  1. College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, China
  • Received:2016-05-23 Revised:2016-08-17 Online:2016-12-05 Published:2016-12-05
  • Contact: Yang Yang E-mail:yyang@scu.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

摘要:

A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum's peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron.

关键词: magnetrons, injection locking, tuning stub, phase noise

Abstract:

A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum's peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron.

Key words: magnetrons, injection locking, tuning stub, phase noise

中图分类号:  (Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.))

  • 84.40.Fe
85.40.Qx (Microcircuit quality, noise, performance, and failure analysis) 84.30.Vn (Filters)