中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118104-118104.doi: 10.1088/1674-1056/25/11/118104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

He Zhang(张贺), Shangsheng Li(李尚升), Taichao Su(宿太超), Meihua Hu(胡美华), Guanghui Li(李光辉), Hongan Ma(马红安), Xiaopeng Jia(贾晓鹏)   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 收稿日期:2016-04-11 修回日期:2016-07-19 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Shangsheng Li E-mail:lishsh@hpu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172089), the Education Department of Henan Province, China (Grant No. 12A430010), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

He Zhang(张贺)1, Shangsheng Li(李尚升)1, Taichao Su(宿太超)1, Meihua Hu(胡美华)1, Guanghui Li(李光辉)2, Hongan Ma(马红安)2, Xiaopeng Jia(贾晓鹏)2   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2016-04-11 Revised:2016-07-19 Online:2016-11-05 Published:2016-11-05
  • Contact: Shangsheng Li E-mail:lishsh@hpu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172089), the Education Department of Henan Province, China (Grant No. 12A430010), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

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摘要： Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ° C and pressures of 5.3-5.5 GPa. Because of the presence of sulfur additive, the morphology and color of the large diamond crystals change obviously. The content and shape of inclusions change with increasing sulfur additive. It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive, which results in left down of the V-shape region. The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals. The x-ray photoelectron spectroscopy (XPS) spectra show the presence of S in the diamonds. Furthermore, the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method. When sulfur in the cell of diamond is up to 4.0 wt.%, the resistance of the diamond is 9.628×105 Ω·cm. It is shown that the large single crystal samples are n type semiconductors. This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.

关键词: large diamond, high pressure and high temperature, sulfur additive

Abstract: Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ° C and pressures of 5.3-5.5 GPa. Because of the presence of sulfur additive, the morphology and color of the large diamond crystals change obviously. The content and shape of inclusions change with increasing sulfur additive. It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive, which results in left down of the V-shape region. The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals. The x-ray photoelectron spectroscopy (XPS) spectra show the presence of S in the diamonds. Furthermore, the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method. When sulfur in the cell of diamond is up to 4.0 wt.%, the resistance of the diamond is 9.628×105 Ω·cm. It is shown that the large single crystal samples are n type semiconductors. This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.

Key words: large diamond, high pressure and high temperature, sulfur additive

中图分类号:  (Diamond)

  • 81.05.ug
07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells) 61.72.U- (Doping and impurity implantation)