中国物理B ›› 2015, Vol. 24 ›› Issue (9): 94208-094208.doi: 10.1088/1674-1056/24/9/094208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

An equivalent circuit model for terahertz quantumcascade lasers: Modeling and experiments

姚辰, 徐天鸿, 万文坚, 朱永浩, 曹俊诚   

  1. Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem andInformation Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2015-04-09 修回日期:2015-05-12 出版日期:2015-09-05 发布日期:2015-09-05
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2014CB339803), the National High Technology Research and Development Program of China (Grant No. 2011AA010205), the National Natural Science Foundation of China (Grant Nos. 61131006, 61321492, and 61404149), the Major National Development Project of Scientific Instrument and Equipment, China (Grant No. 2011YQ150021), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), the Major Project, China (Grant No. YYYJ-1123-1), the International Collaboration and Innovation Program on High Mobility Materials Engineering of the Chinese Academy of Sciences, and the Shanghai Municipal Commission of Science and Technology, China (Grant Nos. 14530711300).

An equivalent circuit model for terahertz quantumcascade lasers: Modeling and experiments

Yao Chen (姚辰), Xu Tian-Hong (徐天鸿), Wan Wen-Jian (万文坚), Zhu Yong-Hao (朱永浩), Cao Jun-Cheng (曹俊诚)   

  1. Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem andInformation Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2015-04-09 Revised:2015-05-12 Online:2015-09-05 Published:2015-09-05
  • Contact: Cao Jun-Cheng E-mail:jccao@mail.sim.ac.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2014CB339803), the National High Technology Research and Development Program of China (Grant No. 2011AA010205), the National Natural Science Foundation of China (Grant Nos. 61131006, 61321492, and 61404149), the Major National Development Project of Scientific Instrument and Equipment, China (Grant No. 2011YQ150021), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), the Major Project, China (Grant No. YYYJ-1123-1), the International Collaboration and Innovation Program on High Mobility Materials Engineering of the Chinese Academy of Sciences, and the Shanghai Municipal Commission of Science and Technology, China (Grant Nos. 14530711300).

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摘要：

Terahertz quantum cascade lasers (THz QCLs) emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model. Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

关键词: terahertz, quantum cascade laser, equivalent circuit model, five-level rate equations

Abstract:

Terahertz quantum cascade lasers (THz QCLs) emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model. Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Key words: terahertz, quantum cascade laser, equivalent circuit model, five-level rate equations

中图分类号:  (General laser theory)

  • 42.55.Ah
42.62.-b (Laser applications) 78.30.Fs (III-V and II-VI semiconductors)