Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

doi:10.1088/1674-1056/23/6/068401

中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68401-068401.doi: 10.1088/1674-1056/23/6/068401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

田晓波, 徐晖

Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering, National University of Defense and Technology, Changsha 410073, China

收稿日期:2013-10-19 修回日期:2013-12-18 出版日期:2014-06-15 发布日期:2014-06-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

Tian Xiao-Bo (田晓波), Xu Hui (徐晖)

Embedded System and Solid-State Engineering Technology Center, School of Electronic Science and Engineering, National University of Defense and Technology, Changsha 410073, China

Received:2013-10-19 Revised:2013-12-18 Online:2014-06-15 Published:2014-06-15
Contact: Tian Xiao-Bo E-mail:txiaobo1985@gmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61171017).

摘要/Abstract

摘要： The recent published experimental data of titanium oxide memristor devices which are tested under the same experimental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of memristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coexistence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.

关键词: titanium oxide memristor, simulation program with integrated circuit emphasis, dopant drift, tunnel barrier

Abstract: The recent published experimental data of titanium oxide memristor devices which are tested under the same experimental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of memristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coexistence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.

Key words: titanium oxide memristor, simulation program with integrated circuit emphasis, dopant drift, tunnel barrier

中图分类号: (Passive circuit components)

84.32.-y

85.35.-p (Nanoelectronic devices) 61.46.-w (Structure of nanoscale materials) 85.40.Bh (Computer-aided design of microcircuits; layout and modeling)

田晓波, 徐晖. Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier[J]. 中国物理B, 2014, 23(6): 68401-068401.

Tian Xiao-Bo (田晓波), Xu Hui (徐晖). Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier[J]. Chin. Phys. B, 2014, 23(6): 68401-068401.

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Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

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