中国物理B ›› 2014, Vol. 23 ›› Issue (2): 24203-024203.doi: 10.1088/1674-1056/23/2/024203

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Investigation on the intensity noise characteristics of the semiconductor ring laser

康泽新a b, 蔡鑫伦b, 温晓东a, 刘超a, 简水生a, 余思远b   

  1. a Key Laboratory of All Optical Network & Advanced Telecommunication Network of EMC, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China;
    b The Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1TR, UK
  • 收稿日期:2013-02-27 修回日期:2013-06-17 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the Major State Basic Research Development Program of China (Grant No. 2010CB328206).

Investigation on the intensity noise characteristics of the semiconductor ring laser

Kang Ze-Xin (康泽新)a b, Cai Xin-Lun (蔡鑫伦)b, Wen Xiao-Dong (温晓东)a, Liu Chao (刘超)a, Jian Shui-Sheng (简水生)a, Yu Si-Yuan (余思远)b   

  1. a Key Laboratory of All Optical Network & Advanced Telecommunication Network of EMC, Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China;
    b The Department of Electrical and Electronic Engineering, University of Bristol, Bristol, BS8 1TR, UK
  • Received:2013-02-27 Revised:2013-06-17 Online:2013-12-12 Published:2013-12-12
  • Contact: Kang Ze-Xin E-mail:newism@hotmail.com
  • About author:42.55.Px; 42.60.Mi; 42.65.Pc
  • Supported by:
    Project supported by the Major State Basic Research Development Program of China (Grant No. 2010CB328206).

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摘要： Based on the frequency-domain multimode theoretical model, detailed investigations on the noise characteristic of the semiconductor ring laser (SRL) are first performed in this paper. The comprehensive nonlinear terms related to the third order nonlinear susceptibility χ3 are included in this model; the Langevin noise sources for electric field and carrier density fluctuations are also taken into account. As the injection current increases, the SRL may present several operation regimes. Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs. The influences of the backscattering coefficient on the relative intensity noise (RIN) spectrum in typical operation regimes are investigated in detail.

关键词: semiconductor ring laser, relative intensity noise, low frequency noise enhancement

Abstract: Based on the frequency-domain multimode theoretical model, detailed investigations on the noise characteristic of the semiconductor ring laser (SRL) are first performed in this paper. The comprehensive nonlinear terms related to the third order nonlinear susceptibility χ3 are included in this model; the Langevin noise sources for electric field and carrier density fluctuations are also taken into account. As the injection current increases, the SRL may present several operation regimes. Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs. The influences of the backscattering coefficient on the relative intensity noise (RIN) spectrum in typical operation regimes are investigated in detail.

Key words: semiconductor ring laser, relative intensity noise, low frequency noise enhancement

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Mi (Dynamical laser instabilities; noisy laser behavior) 42.65.Pc (Optical bistability, multistability, and switching, including local field effects)