中国物理B ›› 2013, Vol. 22 ›› Issue (6): 66101-066101.doi: 10.1088/1674-1056/22/6/066101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

吕晓龙, 张霞, 刘小龙, 颜鑫, 崔建功, 李军帅, 黄永清, 任晓敏   

  1. State Key Laboratory of Information Photonics & Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2012-08-22 修回日期:2012-11-27 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007 and 61077049), the International Science & Technology Cooperation Program of China (Grant No. 2011DFR11010), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120005110011), and the 111 Program of China (Grant No. B07005).

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

Lü Xiao-Long (吕晓龙), Zhang Xia (张霞), Liu Xiao-Long (刘小龙), Yan Xin (颜鑫), Cui Jian-Gong (崔建功), Li Jun-Shuai (李军帅), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏)   

  1. State Key Laboratory of Information Photonics & Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2012-08-22 Revised:2012-11-27 Online:2013-05-01 Published:2013-05-01
  • Contact: Zhang Xia E-mail:xzhang@bupt.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB327600), the National Natural Science Foundation of China (Grant Nos. 61020106007 and 61077049), the International Science & Technology Cooperation Program of China (Grant No. 2011DFR11010), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120005110011), and the 111 Program of China (Grant No. B07005).

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摘要： We report on the Au-assisted vapour-liquid-solid (VLS) growth of GaAs/InxGa1-xAs/GaAs (0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs (111) B substrates via metal-organic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced indium precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.

关键词: nanostructures, nanowire heterostructures, metal-organic chemical vapor deposition

Abstract: We report on the Au-assisted vapour-liquid-solid (VLS) growth of GaAs/InxGa1-xAs/GaAs (0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs (111) B substrates via metal-organic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced indium precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.

Key words: nanostructures, nanowire heterostructures, metal-organic chemical vapor deposition

中图分类号:  (Nanocrystals)

  • 61.46.Hk
68.37.Lp (Transmission electron microscopy (TEM)) 61.46.Km (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))