First principles simulation technique for characterizing single event effects

doi:10.1088/1674-1056/20/6/068501

中国物理B ›› 2011, Vol. 20 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/20/6/068501

First principles simulation technique for characterizing single event effects

郭刚¹, 闫逸华², 张科营³, 郭红霞³, 罗尹虹³, 范如玉³, 陈伟³, 林东生³

(1)China Institute of Atomic Energy, Beijing 102413, China; (2)Department of Engineering Physics, Tsinghua University, Beijing 100084, China; (3)Northwest Institute of Nuclear Techniques, Xián 710024, China

收稿日期:2010-06-17 修回日期:2011-03-14 出版日期:2011-06-15 发布日期:2011-06-15

First principles simulation technique for characterizing single event effects

Zhang Ke-Ying (张科营)^a, Guo Hong-Xia (郭红霞)^a, Luo Yin-Hong (罗尹虹)^a, Fan Ru-Yu (范如玉)^a, Chen Wei (陈伟)^a, Lin Dong-Sheng (林东生)^a, Guo Gang (郭刚)^b, Yan Yi-Hua (闫逸华)^c

^a Northwest Institute of Nuclear Techniques, Xi'an 710024, China; ^b China Institute of Atomic Energy, Beijing 102413, China; ^c Department of Engineering Physics, Tsinghua University, Beijing 100084, China

Received:2010-06-17 Revised:2011-03-14 Online:2011-06-15 Published:2011-06-15

摘要/Abstract

摘要： This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.

关键词: single event effect, static random access memory, cross section, simulation

Abstract: This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25 μm advanced complementary metal-oxide-semiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.

Key words: single event effect, static random access memory, cross section, simulation

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

张科营, 郭红霞, 罗尹虹, 范如玉, 陈伟, 林东生, 郭刚, 闫逸华. First principles simulation technique for characterizing single event effects[J]. 中国物理B, 2011, 20(6): 68501-068501.

Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华). First principles simulation technique for characterizing single event effects[J]. Chin. Phys. B, 2011, 20(6): 68501-068501.

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First principles simulation technique for characterizing single event effects

First principles simulation technique for characterizing single event effects

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