Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

doi:10.1088/1674-1056/20/1/017302

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/20/1/017302

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

李丰颖¹, 罗煜聘², 田力耕³, 蔡春鸿³, 李明宪⁴

(1)Department of Chemistry, National Chung Hsing University, Taichung, Taiwan 420, China; (2)Department of Electronic Engineering, National Formosa University, Yunlin County, Taiwan 632, China; (3)Department of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan 300, China; (4)Department of Physics, Tamkang University, Tamsui, Taipei County, Taiwan 251, China

收稿日期:2010-05-12 修回日期:2010-06-07 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National Science Council (NSC) of Taiwan, China, FYL supported by the NSC (Grant No. 96-2113-M-005-008-MY3), MHL supported by the NSC (Grant No. 95-2112-M-032-015) and also CHT supported by the NSC (Grant No. 95-2120-M-007-007).

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Luo Yu-Pin(罗煜聘)^a), Tien Li-Gan(田力耕)^b), Tsai Chuen-Horng(蔡春鸿)^b), Lee Ming-Hsien(李明宪)^c), and Li Feng-Yin(李丰颖)^d)†

^a Department of Electronic Engineering, National Formosa University, Yunlin County, Taiwan 632, China; ^b Department of Engineering and System Science, National Tsing Hua University, Hsin Chu, Taiwan 300, China; ^c Department of Physics, Tamkang University, Tamsui, Taipei County, Taiwan 251, China; ^d Department of Chemistry, National Chung Hsing University, Taichung, Taiwan 420, China

Received:2010-05-12 Revised:2010-06-07 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National Science Council (NSC) of Taiwan, China, FYL supported by the NSC (Grant No. 96-2113-M-005-008-MY3), MHL supported by the NSC (Grant No. 95-2112-M-032-015) and also CHT supported by the NSC (Grant No. 95-2120-M-007-007).

摘要/Abstract

摘要： Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed.

关键词: chiral carbon nanotube, mono-vacancy defect, energy gap, external electric field

Abstract: Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed.

Key words: chiral carbon nanotube, mono-vacancy defect, energy gap, external electric field

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.63.Fg (Nanotubes) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)

罗煜聘, 田力耕, 蔡春鸿, 李明宪, 李丰颖. Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field[J]. 中国物理B, 2011, 20(1): 17302-017302.

Luo Yu-Pin(罗煜聘), Tien Li-Gan(田力耕), Tsai Chuen-Horng(蔡春鸿), Lee Ming-Hsien(李明宪), and Li Feng-Yin(李丰颖). Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field[J]. Chin. Phys. B, 2011, 20(1): 17302-017302.

参考文献 37

[1]	Ijima S 1991 Nature 354 56
[2]	Dekker C 1999 Phys. Today 52 22
[3]	Odom T W, Huang J L, Kim P and Lieber C M 2000 J. Phys. Chem. B 104 2794
[4]	Li P J, Zhang W J, Zhang Q F and Wu J L 2007 Acta Phys. Sin. 56 1054 (in Chinese)
[5]	Reed M A and Tour J M 2000 Sci. Am. 282 86
[6]	Tans S J, Verschueren R M and Dekker C 1998 Nature 393 49
[7]	Liu H and Yin H J 2009 Acta Phys. Sin. 58 3287 (in Chinese)
[8]	Wang L D, Chen G D, Zhang J Q, Yang M, Wang Y J and An B 2009 Acta Phys. Sin. 58 7856 (in Chinese)
[9]	Martel R, Schmidt T, Shea H R, Hertel T and Avouris P 1998 Appl. Phys. Lett. 73 2447
[10]	Zhou C, Kong J and Dai H 1999 Appl. Phys. Lett. 76 1597
[11]	Lou L, Nordlander P and Smalley R E 1995 Phys. Rev. B 52 1429
[12]	Kim C, Kim B, Lee S M, Jo C and Lee Y H 2001 Appl. Phys. Lett. 79 1187
[13]	Rochefort A, Ventra M D and Avouris P 2001 Appl. Phys. Lett. 78 2521
[14]	Li Y, Rotkin S V and Ravaioli U 2003 Nano Lett. 3 183
[15]	Brothers E N, Kudin K N and Scuseria G E 2005 Phys. Rev. B 72 033402
[16]	Ebbesen T W and Takada T 1995 Carbon 33 973
[17]	Mawhinney D B, Naumenko V, Kuznetsova A, Yates J T, Liu J and Smalley R E 2000 Chem. Phys. Lett. 324 213
[18]	Hashimoto A, Suenaga K, Gloter A, Urita K and Ijima S 2004 Nature 430 870
[19]	Charlier J C, Ebbesen T W and Lambin P 1996 Phys. Rev. B 53 11108
[20]	Crespi V H, Cohen M L and Rubio A 1997 Phys. Rev. Lett. 79 2093
[21]	Chico L, Lopez Sancho M P and Munoz M C 1998 Phys. Rev. Lett. 81 1278
[22]	Kostyrko T, Bartkowiak M and Mahan G D 1999 Phys. Rev. B 60 10735
[23]	Hansson A, Paulsson M and Stafstrom S 2000 Phys. Rev. B 62 7639
[24]	Bockrath M, Liang W, Bozovic D, Hafner J H, Lieber C M, Tinkham M and Park H 2001 Science 291 283
[25]	Ewels C P, Heggie M I and Briddon P R 2002 Chem. Phys. Lett. 351 178
[26]	Luo Y P, Tien L G, Lee M H and Li F Y 2010 Chin. Phys. B 19 027102
[27]	Freitag M, Johnson A T, Kalinin S V and Bonnell D A 2002 Phys. Rev. Lett. 89 216801
[28]	Chen M W, Lan M, Yuan L, Wang Y Y, Wang Z D and Xu J J 2009 Chin. Phys. B 18 1691
[29]	Yao X H, Han Q and Xin H 2008 Acta Phys. Sin. 57 4391 (in Chinese)
[30]	Zeng H, Hu H F, Wei J W and Peng P 2006 Acta Phys. Sin. 55 4822 (in Chinese)
[31]	Kim G, Jeong B W and Ihm J 2006 Appl. Phys. Lett. 88 193107
[32]	Tien L G, Tsai C H, Li F Y and Lee M H 2005 Phys. Rev. B 72 245417
[33]	Payne M C, Teter M P, Allan D C, Arias T A and Johannopoulos J D 1992 Rev. Mod. Phys. 64 1045
[34]	Perdew J P, Chevary J A, Vosko S H, Jackson K A, Pederson M R, Singh D J and Fiolhais C 1992 Phys. Rev. B 46 6671
[35]	White J A and Bird D M 1994 Phys. Rev. B 50 R4954
[36]	Vanderbilt D 1990 Phys. Rev. B 41 R7892
[37]	Kunc K and Martin R M 1982 Phys. Rev. Lett. 48 406 endfootnotesize

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

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