Properties study of LiNbO3 lateral field excited device working on thickness extension mode

doi:10.1088/1674-1056/19/9/097701

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97701-097701.doi: 10.1088/1674-1056/19/9/097701

Properties study of LiNbO₃ lateral field excited device working on thickness extension mode

张志甜¹, 马廷锋¹, 张超², 王文炎², 刘岩², 冯冠平²

(1)Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 10084, China; (2)Research Institute of Tsinghua University in Shenzhen, Shenzhen, Guangdong 518057, China

收稿日期:2009-12-16 修回日期:2010-03-24 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60571014) and Shenzhen Shuangbai Project.

Properties study of LiNbO₃ lateral field excited device working on thickness extension mode

Zhang Zhi-Tian(张志甜)^a), Zhang Chao(张超)^b)^†, Wang Wen-Yan(王文炎)^b), Ma Ting-Feng(马廷锋)^a), Liu Yan(刘岩)^b), and Feng Guan-Ping(冯冠平)^b)

^a Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China; ^b Research Institute of Tsinghua University in Shenzhen, Shenzhen, Guangdong 518057, China

Received:2009-12-16 Revised:2010-03-24 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60571014) and Shenzhen Shuangbai Project.

摘要/Abstract

摘要： This paper investigates the properties of thickness extension mode excited by lateral electric field on LiNbO₃ by using the extended Christoffel--Bechmann method. It finds that the lateral field excitation coupling factor for a-mode (quasi-extensional mode) reaches its maximum value of 28% on X-cut LiNbO₃. The characteristics of a lateral field excitation device made of X-cut LiNbO₃ have been investigated and the lateral field excitation device is used for the design of a high frequency ultrasonic transducer. The time and frequency domain pulse/echo response of the LiNbO₃ lateral field excitation ultrasonic transducer is analysed with the modified Krimholtz--Leedom--Matthae model and tested using traditional pulse/echo method. A LiNbO₃ lateral field excitation ultrasonic transducer with the centre frequency of 33.44 MHz and the --6 dB bandwidth of 33.8% is acquired, which is in good agreement with the results of the Krimholtz--Leedom--Matthae model. Further analysis suggests that the LiNbO₃ lateral field excitation device has great potential in the design of broadband high frequency ultrasonic transducers.

Abstract: This paper investigates the properties of thickness extension mode excited by lateral electric field on LiNbO₃ by using the extended Christoffel–Bechmann method. It finds that the lateral field excitation coupling factor for a-mode (quasi-extensional mode) reaches its maximum value of 28% on X-cut LiNbO₃. The characteristics of a lateral field excitation device made of X-cut LiNbO₃ have been investigated and the lateral field excitation device is used for the design of a high frequency ultrasonic transducer. The time and frequency domain pulse/echo response of the LiNbO₃ lateral field excitation ultrasonic transducer is analysed with the modified Krimholtz–Leedom–Matthae model and tested using traditional pulse/echo method. A LiNbO₃ lateral field excitation ultrasonic transducer with the centre frequency of 33.44 MHz and the –6 dB bandwidth of 33.8% is acquired, which is in good agreement with the results of the Krimholtz–Leedom–Matthae model. Further analysis suggests that the LiNbO₃ lateral field excitation device has great potential in the design of broadband high frequency ultrasonic transducers.

Key words: lateral field excitation, high frequency ultrasonic transducer, LiNbO₃, thickness extension mode

中图分类号:

7760

张志甜, 张超, 王文炎, 马廷锋, 刘岩, 冯冠平. Properties study of LiNbO₃ lateral field excited device working on thickness extension mode[J]. 中国物理B, 2010, 19(9): 97701-097701.

Zhang Zhi-Tian(张志甜), Zhang Chao(张超), Wang Wen-Yan(王文炎), Ma Ting-Feng(马廷锋), Liu Yan(刘岩), and Feng Guan-Ping(冯冠平). Properties study of LiNbO₃ lateral field excited device working on thickness extension mode[J]. Chin. Phys. B, 2010, 19(9): 97701-097701.

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Properties study of LiNbO₃ lateral field excited device working on thickness extension mode

Properties study of LiNbO₃ lateral field excited device working on thickness extension mode

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