Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

doi:10.1088/1674-1056/19/9/097502

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97502-097502.doi: 10.1088/1674-1056/19/9/097502

Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

方泽波¹, 陈伟¹, 何丕模², 谭永胜³

(1)Department of Physics, Shaoxing University, Shaoxing 312000, China; (2)Department of Physics, Zhejiang University, Hangzhou 310027, China; (3)Department of Physics, Zhejiang University, Hangzhou 310027, China; Department of Physics, Shaoxing University, Shaoxing 312000, China

收稿日期:2009-12-22 修回日期:2010-03-25 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10774129 and 60425411) and the Ministry of Science and Technology of China.

Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

Tan Yong-Sheng(谭永胜)^a)b), Fang Ze-Bo(方泽波)^b), Chen Wei(陈伟)^b), and He Pi-Mo(何丕模)^a)†

^a Department of Physics, Zhejiang University, Hangzhou 310027, China; ^b Department of Physics, Shaoxing University, Shaoxing 312000, China

Received:2009-12-22 Revised:2010-03-25 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10774129 and 60425411) and the Ministry of Science and Technology of China.

摘要/Abstract

摘要： This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O₂, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.

Abstract: This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O₂, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.

Key words: Eu-doped ZnO films, ferromagnetism, radio-frequency magnetic sputtering

中图分类号:

7550P

谭永胜, 方泽波, 陈伟, 何丕模. Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering[J]. 中国物理B, 2010, 19(9): 97502-097502.

Tan Yong-Sheng(谭永胜), Fang Ze-Bo(方泽波), Chen Wei(陈伟), and He Pi-Mo(何丕模). Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering[J]. Chin. Phys. B, 2010, 19(9): 97502-097502.

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Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

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