Fabrication of suspended graphene devices and their electronic properties

doi:10.1088/1674-1056/19/9/097307

中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97307-097307.doi: 10.1088/1674-1056/19/9/097307

Fabrication of suspended graphene devices and their electronic properties

程增光¹, 李忠军¹, 方英¹, 李强², 王志华²

(1)National Center for Nanoscience and Technology, Beijing 100190, China; (2)State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China

收稿日期:2010-04-05 修回日期:2010-05-04 出版日期:2010-09-15 发布日期:2010-09-15
基金资助:
Project supported by the Special Presidential Foundation of the Chinese Academy of Sciences, China (Grant No. 08172911ZX), the National Basic Research Program of China (Grant No. 2009CB930200), and the National Natural Science Foundation of China (Grant N

Fabrication of suspended graphene devices and their electronic properties

Li Qiang(李强)^a), Cheng Zeng-Guang(程增光)^b), Li Zhong-Jun(李忠军)^b), Wang Zhi-Hua(王志华)^a)†, and Fang Ying(方英)^b)‡

^a State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China; ^b National Center for Nanoscience and Technology, Beijing 100190, China

Received:2010-04-05 Revised:2010-05-04 Online:2010-09-15 Published:2010-09-15
Supported by:
Project supported by the Special Presidential Foundation of the Chinese Academy of Sciences, China (Grant No. 08172911ZX), the National Basic Research Program of China (Grant No. 2009CB930200), and the National Natural Science Foundation of China (Grant No. 20973045).

摘要/Abstract

摘要： Suspended graphene devices are successfully fabricated by using a novel PMMA/MMA/PMMA tri-layer resist technique. The gap between graphene and dielectric substrate can be easily controlled by the thickness of the bottom PMMA layer, and no wet-etching with hazardous hydrofluoric acid is involved in our fabrication process. Electrical characterizations on suspended graphene devices are performed in vacuum when in-situ current annealing directly leads to a significant improvement on transport properties of graphene, i.e., the increase of carrier mobility with the reduction of width of Dirac peak. Our results make a new opportunity to study intrinsic properties of graphene.

Abstract: Suspended graphene devices are successfully fabricated by using a novel PMMA/MMA/PMMA tri-layer resist technique. The gap between graphene and dielectric substrate can be easily controlled by the thickness of the bottom PMMA layer, and no wet-etching with hazardous hydrofluoric acid is involved in our fabrication process. Electrical characterizations on suspended graphene devices are performed in vacuum when in-situ current annealing directly leads to a significant improvement on transport properties of graphene, i.e., the increase of carrier mobility with the reduction of width of Dirac peak. Our results make a new opportunity to study intrinsic properties of graphene.

Key words: graphene, transport, suspension, high mobility

中图分类号:

7340T

李强, 程增光, 李忠军, 王志华, 方英. Fabrication of suspended graphene devices and their electronic properties[J]. 中国物理B, 2010, 19(9): 97307-097307.

Li Qiang(李强), Cheng Zeng-Guang(程增光), Li Zhong-Jun(李忠军), Wang Zhi-Hua(王志华), and Fang Ying(方英). Fabrication of suspended graphene devices and their electronic properties[J]. Chin. Phys. B, 2010, 19(9): 97307-097307.

参考文献 23

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
[2]	Geim A K 2009 Science 324 1530
[3]	Zhang Y B, Tan Y W, Stormer H L and Kim P 2005 Nature 438 201
[4]	Geim A K and Novoselov K S 2007 Nat. Mater. 6 183
[5]	Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V and Geim A K 2005 Proc. Natl. Acad. Sci. U.S.A. 102 10451
[6]	Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P and Geim A K 2007 Science 315 1379
[7]	Pan Y, Shi D X and Gao H J 2007 Chin. Phys. 16 3151
[8]	Timko B P, Cohen-Karni T, Yu G H, Qing Q, Tian B Z and Lieber C M 2009 Nano Lett. 9 914
[9]	Chen F, Xia J L and Tao N J 2009 Nano Lett. 9 1621
[10]	Liu G., Stillman W, Rumyantsev S, Shao Q, Shur M and Balandin A A 2009 Appl. Phys. Lett. 95 033103
[11]	Sun J T, Du S X, Xiao W D, Hu H, Zhang Y Y, Li G and Gao H J 2009 Chin. Phys. B 18 3008
[12]	Lin Y M and Avouris P 2008 Nano Lett. 8 2119
[13]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P and Stormer H L 2008 Solid State Commun. 146 351
[14]	Du X, Skachko I, Barker A and Andrei E Y 2008 Nat. Nanotechnol. 3 491
[15]	Muriale L, Lee E, Genovese J and Trend S 1996 Ann. Occup. Hyg. 40 705
[16]	Blake P, Hill E W, Neto A C, Novoselov K S, Jiang D, Yang R, Booth T J and Geim A K 2007 Appl. Phys. Lett. 91 063124
[17]	Li Q, Li Z J, Chen M R and Fang Y 2009 Nano Lett. 9 2129
[18]	Li Z J, Cheng Z G., Wang R, Li Q and Fang Y 2009 Nano Lett. 9 3599
[19]	Das A, Pisana S, Chakraborty B, Piscanec S, Saha S K, Waghmare U V, Novoselov K S, Krishnamurthy H R, Geim A K, Ferrari A C and Sood A K 2008 Nat. Nanotechnol. 3 210
[20]	Gupta A, Russin T J, Gutierrez H R and Eklund P C 2009 Acs. Nano 3 45
[21]	Mitchell F H 1992 Introduction to Electronics Design 2nd ed (Upper Saddle River: Prentice-Hall, Inc)
[22]	Neamen D A 1997 Semiconductor Physics and Devices: Basic Principles 2nd ed (Irwin: McGraw-Hill Comp. Inc)
[23]	Bao W Z, Liu G, Zhao Z, Zhang H, Yan D and Lau C N 2010 Nano Res. 3 98 endfootnotesize

Fabrication of suspended graphene devices and their electronic properties

Fabrication of suspended graphene devices and their electronic properties

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