中国物理B ›› 2010, Vol. 19 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/19/6/067302

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Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions

赵伟, 俞重远, 刘玉敏   

  1. Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2009-08-05 出版日期:2010-06-15 发布日期:2010-06-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405) and the National Natural Science Foundation of China (Grant Nos. 60908028 and 60971068).

Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions

Zhao Wei(赵伟), Yu Zhong-Yuan(俞重远)†, and Liu Yu-Min(刘玉敏)   

  1. Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2009-08-05 Online:2010-06-15 Published:2010-06-15
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405) and the National Natural Science Foundation of China (Grant Nos. 60908028 and 60971068).

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摘要： Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions are investigated in this paper. The finite element method is used. Electronic energy levels are calculated by solving the three-dimensional effective mass Schr?dinger equation including a strain modified confinement potential and piezoelectric effects. The difference in electronic structure between quantum dots grown along the (111) direction and the (011) direction are compared. The cubic and truncated pyramidal shaped quantum dots are adopted.

Abstract: Piezoelectric effects and electronic structures of InAs/GaAs quantum dots grown along (111) and (011) directions are investigated in this paper. The finite element method is used. Electronic energy levels are calculated by solving the three-dimensional effective mass Schr?dinger equation including a strain modified confinement potential and piezoelectric effects. The difference in electronic structure between quantum dots grown along the (111) direction and the (011) direction are compared. The cubic and truncated pyramidal shaped quantum dots are adopted.

Key words: quantum dot, electronic structure, piezoelectric effect

中图分类号:  (Piezoelectricity and electromechanical effects)

  • 77.65.-j
71.20.Nr (Semiconductor compounds) 73.21.La (Quantum dots) 73.63.Kv (Quantum dots) 81.07.Ta (Quantum dots) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)