中国物理B ›› 2010, Vol. 19 ›› Issue (2): 26102-026102.doi: 10.1088/1674-1056/19/2/026102

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Controlling the electronic structure of SnO2 nanowires by Mo-doping

罗志华, 唐东升, 海阔, 余芳, 陈亚奇, 何熊武, 彭跃华, 袁华军, 羊亿   

  1. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China
  • 收稿日期:2009-02-20 修回日期:2009-06-18 出版日期:2010-02-15 发布日期:2010-02-15
  • 基金资助:
    Project supported by the Major Research Plan of National Natural Science Foundation of China (Grant No. 90606010), the Program for New Century Excellent Talents in University, China (Grant No. NCET-07-0278), the Hunan Provincial Natural Science Fund, China (Grant No. 08JJ1001), and the Scientific Research Fund of Hunan Normal University, China (Grant No. 070623).

Controlling the electronic structure of SnO2 nanowires by Mo-doping

Luo Zhi-Hua(罗志华), Tang Dong-Sheng(唐东升)†, Hai Kuo(海阔), Yu Fang(余芳), Chen Ya-Qi(陈亚奇), He Xiong-Wu(何熊武), Peng Yue-Hua(彭跃华), Yuan Hua-Jun(袁华军), and Yang Yi(羊亿)   

  1. Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China
  • Received:2009-02-20 Revised:2009-06-18 Online:2010-02-15 Published:2010-02-15
  • Supported by:
    Project supported by the Major Research Plan of National Natural Science Foundation of China (Grant No. 90606010), the Program for New Century Excellent Talents in University, China (Grant No. NCET-07-0278), the Hunan Provincial Natural Science Fund, China (Grant No. 08JJ1001), and the Scientific Research Fund of Hunan Normal University, China (Grant No. 070623).

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摘要： Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.

Abstract: Mo-doped SnO2 (MTO) nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580 nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.

Key words: doping, nanostructures, chemical vapor deposition processes, semiconducting materials

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
61.72.up (Other materials) 78.30.Hv (Other nonmetallic inorganics) 78.40.Fy (Semiconductors) 78.55.Hx (Other solid inorganic materials) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))