中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117801-117801.doi: 10.1088/1674-1056/19/11/117801

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The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

胡晓龙1, 刘文杰1, 张保平2, 张江勇3, 尚景智4   

  1. (1)Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; (2)Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, China; (3)Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (4)Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
  • 收稿日期:2010-02-28 修回日期:2010-05-13 出版日期:2010-11-15 发布日期:2010-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (Grant No. 2006AA03Z110).

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

Hu Xiao-Long(胡晓龙)a), Zhang Jiang-Yong(张江勇) a)b), Shang Jing-Zhi(尚景智)c), Liu Wen-Jie(刘文杰)a), and Zhang Bao-Ping(张保平) a)d)†   

  1. a Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, China; b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; c Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore; d Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005, China
  • Received:2010-02-28 Revised:2010-05-13 Online:2010-11-15 Published:2010-11-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60876007 and 10974165) and the Research Program of Xiamen Municipal Science and Technology Bureau, China (Grant No. 2006AA03Z110).

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摘要： This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.

Abstract: This paper studies the exciton–longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang–Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang–Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton–LO–phonon coupling is strongly affected by the thickness of the cap layer.

Key words: exciton–longitudinal-optical-phonon, InGaN/GaN single quantum well, GaN cap layer, Huang–Rhys factor

中图分类号:  (Phonon interactions with other quasiparticles)

  • 63.20.kk
63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials) 78.55.Cr (III-V semiconductors) 78.67.De (Quantum wells)