中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117106-117201.doi: 10.1088/1674-1056/19/11/117106

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Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

李亚巍1, 胡志高1, 孙琳1, 杨平雄1, 越方禹2, 褚君浩2, 陈璐3   

  1. (1)Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; (2)Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (3)Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 收稿日期:2010-04-22 修回日期:2010-06-21 出版日期:2010-11-15 发布日期:2010-11-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), Shanghai Leading Academic Discipline Project (Grant No. B411), National Natural Science Foundation of China (Grant No. 60906043), Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800), Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010), and the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU).

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Yue Fang-Yu(越方禹)a)b)†ger, Chen Lu(陈璐)c), Li Ya-Wei(李亚巍)a), Hu Zhi-Gao(胡志高)a), Sun Lin(孙琳)a), Yang Ping-Xiong(杨平雄) a), and Chu Jun-Hao(褚君浩)a)b)   

  1. a Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; bNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; c Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2010-04-22 Revised:2010-06-21 Online:2010-11-15 Published:2010-11-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), Shanghai Leading Academic Discipline Project (Grant No. B411), National Natural Science Foundation of China (Grant No. 60906043), Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800), Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010), and the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU).

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摘要： Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg1-xCdxTe (x≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x≈ 0.39), (ii) the density of V_textrmHg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of VHg will lead to a short-wavelength shift of epilayers, and (iii) the V_textrmHg prefers forming the VHg-AsHg complex when the inactivated-As (AsHg or related) coexists in a certain density, which makes it difficult to annihilate VHg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.

Abstract: Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg1-xCdxTe (x≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra. The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature, commonly assumed to be more favourable for As activation, has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x≈ 0.39), (ii) the density of VHg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of VHg will lead to a short-wavelength shift of epilayers, and (iii) the VHg prefers forming the VHg–AsHg complex when the inactivated-As (AsHg or related) coexists in a certain density, which makes it difficult to annihilate VHg in As-doped epilayers. As a result, the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.

Key words: As-doped HgCdTe, annealing influence, extrinsic/intrinsic impurities, modulated photoluminescence spectra

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)