中国物理B ›› 2009, Vol. 18 ›› Issue (3): 1242-1247.doi: 10.1088/1674-1056/18/3/067

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A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes

毛海央1, 熊继军2, 张文栋2, 王楷群2   

  1. (1)Institute of Microelectronics, Peking University, Beijing 100871, China; (2)Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education, North University of China, Taiyuan 030051, China
  • 收稿日期:2008-06-15 修回日期:2008-08-08 出版日期:2009-03-20 发布日期:2009-03-20
  • 基金资助:
    Project supported in part by the National Natural Science Foundation of China (Grant No 50775209), the Fork Ying Tung Education Foundation (Grant No 101052) and Program for Excellent Talents by Ministry of Education of China.

A novel micro-accelerometer with adjustable sensitivity based on resonant tunneling diodes

Xiong Ji-Jun(熊继军)a)†, Mao Hai-Yang(毛海央)b), Zhang Wen-Dong(张文栋)a), and Wang Kai-Qun(王楷群)a)   

  1. a Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry Education, North University of China, Taiyuan 030051, China; b Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2008-06-15 Revised:2008-08-08 Online:2009-03-20 Published:2009-03-20
  • Supported by:
    Project supported in part by the National Natural Science Foundation of China (Grant No 50775209), the Fork Ying Tung Education Foundation (Grant No 101052) and Program for Excellent Talents by Ministry of Education of China.

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摘要： Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.

关键词: micro-accelerometer, piezoresistance effect, resonant tunnelling diode (RTD), sensitivity

Abstract: Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current--voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.

Key words: micro-accelerometer, piezoresistance effect, resonant tunnelling diode (RTD), sensitivity

中图分类号:  (Junction breakdown and tunneling devices (including resonance tunneling devices))

  • 85.30.Mn
85.30.Kk (Junction diodes) 85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)