中国物理B ›› 2009, Vol. 18 ›› Issue (2): 749-756.doi: 10.1088/1674-1056/18/2/056

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The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

王晓华1, 刘建军2, 安兴涛3   

  1. (1)College of Physical Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China; (2)College of Physical Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China;Hebei Advanced Thin Films Laboratory, Shijiazhuang 050016, China; (3)Engineering, Hebei Normal
  • 收稿日期:2008-10-13 修回日期:2008-10-21 出版日期:2009-02-20 发布日期:2009-02-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10674040) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060094002).

The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

Wang Xiao-Hua(王晓华)a), An Xing-Tao(安兴涛)a), and Liu Jian-Jun(刘建军)a)b)†   

  1. a College of Physical Science and Information Engineering, Hebei Normal University, Shijiazhuang 050016, China; b Hebei Advanced Thin Films Laboratory, Shijiazhuang 050016, China
  • Received:2008-10-13 Revised:2008-10-21 Online:2009-02-20 Published:2009-02-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10674040) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060094002).

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摘要： This paper investigates the effect of Dresselhaus spin--orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin--orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin--orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.

关键词: Dresselhaus spin--orbit coupling, ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures, transfer-matrix method

Abstract: This paper investigates the effect of Dresselhaus spin--orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin--orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin--orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.

Key words: Dresselhaus spin--orbit coupling, ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures, transfer-matrix method

中图分类号:  (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

  • 71.70.Ej
75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.20.At (Surface states, band structure, electron density of states) 72.25.Mk (Spin transport through interfaces) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))