中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2606-2608.doi: 10.1088/1009-1963/15/11/025

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Passively mode-locked Nd:GdVO4 laser at 912nm

张弛, 魏志义, 张玲, 张春雨, 张治国   

  1. Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2006-05-16 修回日期:2006-05-22 出版日期:2006-11-20 发布日期:2006-11-20

Passively mode-locked Nd:GdVO4 laser at 912nm

Zhang Chi(张弛), Wei Zhi-Yi(魏志义), Zhang Ling(张玲)†, Zhang Chun-Yu(张春雨), and Zhang Zhi-Guo(张治国)   

  1. Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2006-05-16 Revised:2006-05-22 Online:2006-11-20 Published:2006-11-20

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摘要： This paper demonstrates the passively mode-locked Nd:GdVO\xj{4} laser operating on the \sj{4}$F_{3/2}$--$^4I_{9/2}$ transition at 912\,nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave mode-locked 912\,nm laser was achieved with a repetition rate of 176\,MHz. At the incident pump power of 17.7\,W, 22.6\,mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3\%.

关键词: diode-pumped laser, solid-state laser, mode locking

Abstract: This paper demonstrates the passively mode-locked Nd:GdVO4 laser operating on the 4$F_{3/2}$--$^4I_{9/2}$ transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave mode-locked 912 nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7 W, 22.6 mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.

Key words: diode-pumped laser, solid-state laser, mode locking

中图分类号:  (Doped-insulator lasers and other solid state lasers)

  • 42.55.Rz
42.50.Gy (Effects of atomic coherence on propagation, absorption, and Amplification of light; electromagnetically induced transparency and Absorption) 42.60.Fc (Modulation, tuning, and mode locking) 42.70.Hj (Laser materials)