中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2374-2377.doi: 10.1088/1009-1963/15/10/031

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Spatial distribution of SiCln (n=0--2) in SiCl4 plasma measured by mass spectroscopy

王照奎1, 娄艳辉1, 林揆训2, 林璇英2, 祝祖送2   

  1. (1)Department of Physics, Henan Normal University, Xinxiang 453007, China; (2)Department of Physics, Shantou University, Shantou 515063, China
  • 收稿日期:2005-12-12 修回日期:2006-04-03 出版日期:2006-10-20 发布日期:2006-10-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G2000028208).

Spatial distribution of SiCln (n=0--2) in SiCl4 plasma measured by mass spectroscopy

Wang Zhao-Kui(王照奎)a)†, Lin Kui-Xun(林揆训)b), Lou Yan-Hui(娄艳辉)a), Lin Xuan-Ying(林璇英)b), and Zhu Zu-Song(祝祖送)b)   

  1. a Department of Physics, Henan Normal University, Xinxiang 453007, China; b Department of Physics, Shantou University, Shantou 515063, China
  • Received:2005-12-12 Revised:2006-04-03 Online:2006-10-20 Published:2006-10-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No G2000028208).

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摘要： For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln (n=0--2) radicals in SiCl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln (n=0--2) radicals have peak values at the position of 10mm above the powered electrode along the axial direction; the relative densities of the Si and SiCln (n=1, 2) radicals have peak values at the positions of 27mm and 7mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SiCl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SiCl, and the relative density of SiCl is several times higher than that of SiCl2/sub>. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.

Abstract: For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln (n=0--2) radicals in SiCl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln (n=0--2) radicals have peak values at the position of 10mm above the powered electrode along the axial direction; the relative densities of the Si and SiCln (n=1, 2) radicals have peak values at the positions of 27mm and 7mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SiCl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SiCl, and the relative density of SiCl is several times higher than that of SiCl2/sub>. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.

Key words: SiCln (n=0--2) neutral radicals, spatial distribution, mass spectrometric diagnosis

中图分类号:  (Emission, absorption, and scattering of electromagnetic radiation ?)

  • 52.25.Os
52.25.Ya (Neutrals in plasmas) 52.70.-m (Plasma diagnostic techniques and instrumentation) 52.80.Hc (Glow; corona)