中国物理B ›› 2004, Vol. 13 ›› Issue (5): 750-753.doi: 10.1088/1009-1963/13/5/030
李守春1, 王泽恒1, 王之建2, 吕有明2, 元金山2, 王志军3
Wang Zhi-Jun (王志军)ab, Wang Zhi-Jian (王之建)a, Li Shou-Chun (李守春)b, Wang Ze-Heng (王泽恒)b, Lü You-Ming (吕有明)a, Yuan Jin-Shan (元金山)a
摘要: We deposited high quality ZnO film by electrophoretic deposition (EPD) using high quality ZnO powder prepared by solid-state pyrolytic reaction. X-ray photoelectron spectroscopy (XPS) and the infrared (IR) absorption spectrum clearly indicate that the ZnO phase powder has been prepared. Transmission electron microscope (TEM) imaging and x-ray diffraction (XRD) show that the average grain size of the powder is about 20nm. XRD and selected-area electron diffraction (SAED) reveal that the ZnO film has a polycrystalline hexagonal wurtzite structure. Only a strong ultraviolet emission peak at 390nm can be observed at room temperature.
中图分类号: (II-VI semiconductors)