ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

中国物理B ›› 2001, Vol. 10 ›› Issue (13): 111-116.

ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

张泽¹, 李述汤²

(1)Beijing Laboratory of Electron Microscopy, Center of Condensed Mater Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Center of Super-Diamond and Advanced Films & Department of Physics and Material Sciences, City University of Hong Kong, Hong Kong, China

收稿日期:2001-01-01 修回日期:2001-03-07 出版日期:2001-12-25 发布日期:2005-07-07

ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

Zhang Ze (张泽)^a, S.T.Lee (李述汤)^b

^a Beijing Laboratory of Electron Microscopy, Center of Condensed Mater Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; ^b Center of Super-Diamond and Advanced Films & Department of Physics and Material Sciences, City University of Hong Kong, Hong Kong, China

Received:2001-01-01 Revised:2001-03-07 Online:2001-12-25 Published:2005-07-07

摘要/Abstract

摘要： Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiO_{x particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs.}

Abstract: Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiO_{x particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs.}

Key words: Silicon, nano-wires, growth mechanism, microstructures

中图分类号:

6146

张泽, 李述汤. ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES[J]. 中国物理B, 2001, 10(13): 111-116.

Zhang Ze (张泽), S.T.Lee (李述汤). ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES[J]. Chinese Physics, 2001, 10(13): 111-116.

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ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

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