中国物理B ›› 1998, Vol. 7 ›› Issue (8): 608-612.doi: 10.1088/1004-423X/7/8/008

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PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE

Norikata Usami1, H. Sunamura1, Yasuhiro Shiraki1, 季振国2   

  1. (1)Research center for Advanced Science and Technology University of Tokyo, Komaba 4-6-1, Tokyo, Japan; (2)State key Laboratory for Silicon Material Zhejiang University, Hangzhou 310027, China
  • 收稿日期:1997-12-01 修回日期:1998-03-09 出版日期:1998-08-20 发布日期:1998-08-20

PHOTOLUMINESCENCE AND RAMAN SCATTERING OF PURE GERMANIUM/SILICON SHORT PERIOD SUPERLATTICE

Ji Zhen-guo (季振国)a, Norikata Usamib, H. Sunamurab, Yasuhiro Shirakib   

  1. a State key Laboratory for Silicon Material Zhejiang University, Hangzhou 310027, China; b Research center for Advanced Science and Technology University of Tokyo, Komaba 4-6-1, Tokyo, Japan
  • Received:1997-12-01 Revised:1998-03-09 Online:1998-08-20 Published:1998-08-20

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摘要： Pure Ge/Si short period superlattice (SPS) samples grown by gas source molecular beam epitaxy (GS-MBE) were studied by photoluminescence and Raman scattering. For SPS samples with Germanium layer thickness (LGe) of 1.5 monolayer (ML), a new band of photoluminescence is observed for silicon layer thickness (LSi) in an intermediate range of 1.9-2.9 nm. In contrast to pure Ge/Si quantum wells, the energy of the new band shows a red-shift with the increase of LSi. Raman scattering results show that when the intensity of the photoluminescence of the new band reaches a maximum, the Raman shift relating the vibration of Si-Si reaches a minimum. It is therefore considered that the new band of the pure Ge/Si SPS is related with some kind of strain relaxation process.

Abstract: Pure Ge/Si short period superlattice (SPS) samples grown by gas source molecular beam epitaxy (GS-MBE) were studied by photoluminescence and Raman scattering. For SPS samples with Germanium layer thickness (LGe) of 1.5 monolayer (ML), a new band of photoluminescence is observed for silicon layer thickness (LSi) in an intermediate range of 1.9-2.9 nm. In contrast to pure Ge/Si quantum wells, the energy of the new band shows a red-shift with the increase of LSi. Raman scattering results show that when the intensity of the photoluminescence of the new band reaches a maximum, the Raman shift relating the vibration of Si-Si reaches a minimum. It is therefore considered that the new band of the pure Ge/Si SPS is related with some kind of strain relaxation process.

中图分类号:  (Multilayers; superlattices; photonic structures; metamaterials)

  • 78.67.Pt
68.65.Cd (Superlattices) 78.55.Ap (Elemental semiconductors) 78.30.Am (Elemental semiconductors and insulators) 68.55.-a (Thin film structure and morphology) 68.35.Gy (Mechanical properties; surface strains)