中国物理B ›› 2026, Vol. 35 ›› Issue (1): 13401-013401.doi: 10.1088/1674-1056/ae15f4

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Single electron capture in low- and intermediate-energy collisions of Si3,4+ with He

Yingzhou Li(李英卓)1, Yadong Liu(刘亚东)2,3, Yueying Qi(祁月盈)4,†, Ling Liu(刘玲)3,‡, Yizhi Qu(屈一至)1, and Jianguo Wang(王建国)3   

  1. 1 School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
    2 Hefei National Research Center for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Institute of Applied Physics and Computational Mathematitics, Beijing 100088, China;
    4 College of Mechanical Engineering, Jiaxing University, Jiaxing 314001, China
  • 收稿日期:2025-08-26 修回日期:2025-10-12 接受日期:2025-10-22 发布日期:2025-12-30
  • 通讯作者: Yueying Qi, Ling Liu E-mail:yying_qi@mail.zjxu.edu.cn;liu_ling@iapcm.ac.cn
  • 基金资助:
    This work was supported by the National Key Research and Development Program of China (Grant No. 2022YFA1602504) and the National Natural Science Foundation of China (Grant Nos. 12274040 and U2430208).

Single electron capture in low- and intermediate-energy collisions of Si3,4+ with He

Yingzhou Li(李英卓)1, Yadong Liu(刘亚东)2,3, Yueying Qi(祁月盈)4,†, Ling Liu(刘玲)3,‡, Yizhi Qu(屈一至)1, and Jianguo Wang(王建国)3   

  1. 1 School of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
    2 Hefei National Research Center for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China;
    3 Institute of Applied Physics and Computational Mathematitics, Beijing 100088, China;
    4 College of Mechanical Engineering, Jiaxing University, Jiaxing 314001, China
  • Received:2025-08-26 Revised:2025-10-12 Accepted:2025-10-22 Published:2025-12-30
  • Contact: Yueying Qi, Ling Liu E-mail:yying_qi@mail.zjxu.edu.cn;liu_ling@iapcm.ac.cn
  • Supported by:
    This work was supported by the National Key Research and Development Program of China (Grant No. 2022YFA1602504) and the National Natural Science Foundation of China (Grant Nos. 12274040 and U2430208).

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摘要： The single electron capture processes in Si$^{3,4+}+$He collisions have been investigated theoretically employing the two-center atomic orbital close-coupling method in the energy range 0.01-100 keV/u. Total and state-selective electron capture cross sections for the dominant and subdominant reaction channels are calculated and compared with the available experimental and theoretical data. For the total charge transfer cross sections, the present results show better agreements with the available experimental data than the other theoretical ones in the overlapping energy region for both collision systems. For the state-selective cross sections, the present results for 3s and 3p states are in general agreement with the previous MOCC results in the low energy region for both collision systems. Furthermore, the cross sections for electron captured to the 3d, 4$l$ and 5$l$ ($l=0$, 1, ..., $n-1$) states of Si$^{2+}$ and Si$^{3+}$ ions are first provided in a broad energy region in our work. These results are useful for the investigations in astrophysics. The datasets presented in this paper, including the total and state-selective electron capture cross sections of Si$^{3,4+}+$He collisions in 0.01-100 keV/u, are openly available at https://doi.org/10.57760/sciencedb.j00113.00257.

关键词: atomic orbital close-coupling, single electron capture cross section

Abstract: The single electron capture processes in Si$^{3,4+}+$He collisions have been investigated theoretically employing the two-center atomic orbital close-coupling method in the energy range 0.01-100 keV/u. Total and state-selective electron capture cross sections for the dominant and subdominant reaction channels are calculated and compared with the available experimental and theoretical data. For the total charge transfer cross sections, the present results show better agreements with the available experimental data than the other theoretical ones in the overlapping energy region for both collision systems. For the state-selective cross sections, the present results for 3s and 3p states are in general agreement with the previous MOCC results in the low energy region for both collision systems. Furthermore, the cross sections for electron captured to the 3d, 4$l$ and 5$l$ ($l=0$, 1, ..., $n-1$) states of Si$^{2+}$ and Si$^{3+}$ ions are first provided in a broad energy region in our work. These results are useful for the investigations in astrophysics. The datasets presented in this paper, including the total and state-selective electron capture cross sections of Si$^{3,4+}+$He collisions in 0.01-100 keV/u, are openly available at https://doi.org/10.57760/sciencedb.j00113.00257.

Key words: atomic orbital close-coupling, single electron capture cross section

中图分类号:  (Scattering of atoms and molecules)

  • 34.50.-s
34.10.+x (General theories and models of atomic and molecular collisions and interactions (including statistical theories, transition state, stochastic and trajectory models, etc.))