中国物理B ›› 2024, Vol. 33 ›› Issue (12): 127302-127302.doi: 10.1088/1674-1056/ad8db4

所属专题： SPECIAL TOPIC — Stephen J. Pennycook: A research life in atomic-resolution STEM and EELS

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A universal resist-assisted metal transfer method for 2D semiconductor contacts

Xuanye Liu(刘轩冶)1,2,†, Linxuan Li(李林璇)2,†, Chijun Wei(尉驰俊)2, Peng Song(宋鹏)1,2, Hui Gao(高辉)1,2, Kang Wu(吴康)1,2, Nuertai Jiazila(努尔泰·加孜拉)1,2, Jiequn Sun(孙杰群)1,2, Hui Guo(郭辉)1,2,3, Haitao Yang(杨海涛)1,2,3, Wu Zhou(周武)2,‡, Lihong Bao(鲍丽宏)1,2,3,§, and Hong-Jun Gao(高鸿钧)1,2,3   

  1. 1 Institute of physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Hefei National Laboratory, Hefei 230088, China
  • 收稿日期:2024-09-26 修回日期:2024-10-31 接受日期:2024-11-01 出版日期:2024-12-15 发布日期:2024-12-15
  • 通讯作者: Wu Zhou, Lihong Bao E-mail:wuzhou@ucas.ac.cn;lhbao@iphy.ac.cn
  • 基金资助:
    This work was supported by the National Key Research & Development Project of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), Strategic Priority Research Program of Chinese Academy of Sciences (CAS, Grant Nos. XDB30000000 and XDB28000000), CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039).

A universal resist-assisted metal transfer method for 2D semiconductor contacts

Xuanye Liu(刘轩冶)1,2,†, Linxuan Li(李林璇)2,†, Chijun Wei(尉驰俊)2, Peng Song(宋鹏)1,2, Hui Gao(高辉)1,2, Kang Wu(吴康)1,2, Nuertai Jiazila(努尔泰·加孜拉)1,2, Jiequn Sun(孙杰群)1,2, Hui Guo(郭辉)1,2,3, Haitao Yang(杨海涛)1,2,3, Wu Zhou(周武)2,‡, Lihong Bao(鲍丽宏)1,2,3,§, and Hong-Jun Gao(高鸿钧)1,2,3   

  1. 1 Institute of physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Hefei National Laboratory, Hefei 230088, China
  • Received:2024-09-26 Revised:2024-10-31 Accepted:2024-11-01 Online:2024-12-15 Published:2024-12-15
  • Contact: Wu Zhou, Lihong Bao E-mail:wuzhou@ucas.ac.cn;lhbao@iphy.ac.cn
  • Supported by:
    This work was supported by the National Key Research & Development Project of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), Strategic Priority Research Program of Chinese Academy of Sciences (CAS, Grant Nos. XDB30000000 and XDB28000000), CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700), and Beijing Outstanding Young Scientist Program (Grant No. BJJWZYJH01201914430039).

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摘要： With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO$_{2}$/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS$_{2}$ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using $\alpha$-In$_{2}$Se$_{3}$ as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.

关键词: metal electrode transfer, 2D materials, Schottky barrier, ambipolar, memristor

Abstract: With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO$_{2}$/Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS$_{2}$ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using $\alpha$-In$_{2}$Se$_{3}$ as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.

Key words: metal electrode transfer, 2D materials, Schottky barrier, ambipolar, memristor

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
72.20.Fr (Low-field transport and mobility; piezoresistance) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.20.-r (Electron states at surfaces and interfaces)