中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/acd2b1

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InSe-Te van der Waals heterostructures for current rectification and photodetection

Hao Wang(王昊)1,2,†, Guo-Yu Xian(冼国裕)1,2,†, Li Liu(刘丽)1, Xuan-Ye Liu(刘轩冶)1,2, Hui Guo(郭辉)1,2,3, Li-Hong Bao(鲍丽宏)1,2,3,§, Hai-Tao Yang(杨海涛)1,2,3,‡, and Hong-Jun Gao(高鸿钧)1,2,3   

  1. 1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
    3. Songshan Lake Materials Laboratory, Dongguan 523808, China
  • 收稿日期:2023-01-20 修回日期:2023-04-19 出版日期:2023-07-14 发布日期:2023-07-28
  • 通讯作者: Hai-Tao Yang, Li-Hong Bao E-mail:htyang@iphy.ac.cn;lhbao@iphy.ac.cn
  • 基金资助:
    Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800), the National Natural Science Foundation of China(Grant No.61888102), and the Chinese Academy of Sciences (Grant Nos.ZDBS-SSW-WHC001, XDB33030100, XDB30000000, and YSBR-003).

InSe-Te van der Waals heterostructures for current rectification and photodetection

Hao Wang(王昊)1,2,†, Guo-Yu Xian(冼国裕)1,2,†, Li Liu(刘丽)1, Xuan-Ye Liu(刘轩冶)1,2, Hui Guo(郭辉)1,2,3, Li-Hong Bao(鲍丽宏)1,2,3,§, Hai-Tao Yang(杨海涛)1,2,3,‡, and Hong-Jun Gao(高鸿钧)1,2,3   

  1. 1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
    3. Songshan Lake Materials Laboratory, Dongguan 523808, China
  • Received:2023-01-20 Revised:2023-04-19 Online:2023-07-14 Published:2023-07-28
  • Supported by:
    Project supported by the Ministry of Science and Technology of China(Grant No.2018YFA0305800), the National Natural Science Foundation of China(Grant No.61888102), and the Chinese Academy of Sciences (Grant Nos.ZDBS-SSW-WHC001, XDB33030100, XDB30000000, and YSBR-003).

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摘要： As the basis of modern electronics and optoelectronics, high-performance, multi-functional p-n junctions have manifested and occupied an important position. However, the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers. The heterojunction constructed by two-dimensional (2D) materials can significantly improve the device performance compared with traditional technologies. Here, we report the InSe-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×107 at drain-source voltage of ±2 V. The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power. Moreover, the heterojunction has stable photo/dark current states and good photoelectric switching characteristics. Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.

关键词: indium selenium, tellurium, van der Waals heterostructure, transport, photodetection

Abstract: As the basis of modern electronics and optoelectronics, high-performance, multi-functional p-n junctions have manifested and occupied an important position. However, the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers. The heterojunction constructed by two-dimensional (2D) materials can significantly improve the device performance compared with traditional technologies. Here, we report the InSe-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×107 at drain-source voltage of ±2 V. The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power. Moreover, the heterojunction has stable photo/dark current states and good photoelectric switching characteristics. Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.

Key words: indium selenium, tellurium, van der Waals heterostructure, transport, photodetection

中图分类号:  (Rectification)

  • 73.40.Ei
73.40.-c (Electronic transport in interface structures) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 72.40.+w (Photoconduction and photovoltaic effects)