Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate

doi:10.1088/1674-1056/accff4

中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98102-098102.doi: 10.1088/1674-1056/accff4

Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate

Yi Biao(表奕), Hong-Liang Lu(路红亮), Hao Peng(彭浩), Zhi-Peng Song(宋志朋), Hui Guo(郭辉), and Xiao Lin(林晓)^†

University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2023-04-03 修回日期:2023-04-19 接受日期:2023-04-25 发布日期:2023-09-07
通讯作者: Xiao Lin E-mail:xlin@ucas.ac.cn
基金资助:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2018YFA0305800 and 2019YFA0308500), the National Natural Science Foundation of China (Grant No. 61925111), the Chinese Academy of Sciences (Grant Nos. XDB28000000 and YSBR-003), the Fundamental Research Funds for the Central Universities, and the CAS Key Laboratory of Vacuum Physics.

Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate

Yi Biao(表奕), Hong-Liang Lu(路红亮), Hao Peng(彭浩), Zhi-Peng Song(宋志朋), Hui Guo(郭辉), and Xiao Lin(林晓)^†

University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2023-04-03 Revised:2023-04-19 Accepted:2023-04-25 Published:2023-09-07
Contact: Xiao Lin E-mail:xlin@ucas.ac.cn
Supported by:
Project supported by the Ministry of Science and Technology of China (Grant Nos. 2018YFA0305800 and 2019YFA0308500), the National Natural Science Foundation of China (Grant No. 61925111), the Chinese Academy of Sciences (Grant Nos. XDB28000000 and YSBR-003), the Fundamental Research Funds for the Central Universities, and the CAS Key Laboratory of Vacuum Physics.

摘要/Abstract

摘要： Intercalation of insulating materials between epitaxial graphene and the metal substrates is highly demanded to restore the intrinsic properties of graphene, and thus essential for the graphene-based devices. Here we demonstrate a successful solution for the intercalation of hafnium oxide into the interface between full-layer graphene and Ir(111) substrate. We first intercalate hafnium atoms beneath the epitaxial graphene. The intercalation of the hafnium atoms leads to the variation of the graphene moiré superstructure periodicity, which is characterized by low-energy electron diffraction (LEED) and low-temperature scanning tunneling microscopy (LT-STM). Subsequently, we introduce oxygen into the interface, resulting in oxidization of the intercalated hafnium. STM and Raman's characterizations reveal that the intercalated hafnium oxide layer could effectively decouple the graphene from the metallic substrate, while the graphene maintains its high quality. Our work suggests a high-k dielectric layer has been successfully intercalated between high-quality epitaxial graphene and metal substrate, providing a platform for applications of large-scale, high-quality graphene for electronic devices.

关键词: epitaxial graphene, hafnium, intercalation, oxidization

Abstract: Intercalation of insulating materials between epitaxial graphene and the metal substrates is highly demanded to restore the intrinsic properties of graphene, and thus essential for the graphene-based devices. Here we demonstrate a successful solution for the intercalation of hafnium oxide into the interface between full-layer graphene and Ir(111) substrate. We first intercalate hafnium atoms beneath the epitaxial graphene. The intercalation of the hafnium atoms leads to the variation of the graphene moiré superstructure periodicity, which is characterized by low-energy electron diffraction (LEED) and low-temperature scanning tunneling microscopy (LT-STM). Subsequently, we introduce oxygen into the interface, resulting in oxidization of the intercalated hafnium. STM and Raman's characterizations reveal that the intercalated hafnium oxide layer could effectively decouple the graphene from the metallic substrate, while the graphene maintains its high quality. Our work suggests a high-k dielectric layer has been successfully intercalated between high-quality epitaxial graphene and metal substrate, providing a platform for applications of large-scale, high-quality graphene for electronic devices.

Key words: epitaxial graphene, hafnium, intercalation, oxidization

中图分类号: (Graphene)

81.05.ue

71.20.Tx (Fullerenes and related materials; intercalation compounds) 79.60.Jv (Interfaces; heterostructures; nanostructures) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))

Yi Biao(表奕), Hong-Liang Lu(路红亮), Hao Peng(彭浩), Zhi-Peng Song(宋志朋), Hui Guo(郭辉), and Xiao Lin(林晓). Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate[J]. 中国物理B, 2023, 32(9): 98102-098102.

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Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate

Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate

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