Large valley Nernst effect in twisted multilayer graphene systems

doi:10.1088/1674-1056/acbd2c

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 107202-107202.doi: 10.1088/1674-1056/acbd2c

所属专题： SPECIAL TOPIC — Valleytronics

Large valley Nernst effect in twisted multilayer graphene systems

Guanlin Jian(简冠林)¹, Zhen-Gang Zhu(朱振刚)^2,3,1,†, and Gang Su(苏刚)^4,1,3,‡

1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2022-10-15 修回日期:2023-01-25 接受日期:2023-02-20 出版日期:2023-09-21 发布日期:2023-09-22
通讯作者: Zhen-Gang Zhu, Gang Su E-mail:zgzhu@ucas.ac.cn;gsu@ucas.ac.cn
基金资助:
Project supported in part by the National Key R&D Program of China (Grant No. 2018YFA0305800) and the National Natural Science Foundation of China (Grant Nos. 11974348 and 11834014). It is also supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB28000000 and XDB33000000). ZGZ is supported in part by the Training Program of Major Research plan of the National Natural Science Foundation of China (Grant No. 92165105) and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-057).

Large valley Nernst effect in twisted multilayer graphene systems

Guanlin Jian(简冠林)¹, Zhen-Gang Zhu(朱振刚)^2,3,1,†, and Gang Su(苏刚)^4,1,3,‡

1 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2022-10-15 Revised:2023-01-25 Accepted:2023-02-20 Online:2023-09-21 Published:2023-09-22
Contact: Zhen-Gang Zhu, Gang Su E-mail:zgzhu@ucas.ac.cn;gsu@ucas.ac.cn
Supported by:
Project supported in part by the National Key R&D Program of China (Grant No. 2018YFA0305800) and the National Natural Science Foundation of China (Grant Nos. 11974348 and 11834014). It is also supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB28000000 and XDB33000000). ZGZ is supported in part by the Training Program of Major Research plan of the National Natural Science Foundation of China (Grant No. 92165105) and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-057).

摘要/Abstract

摘要： Valley Nernst effect is a newly proposed and experimentally confirmed effect, which could be used to design novel thermoelectric devices. We study the valley Nernst effect in (M+N)-layer twisted multilayer graphene systems by a simple low-energy effective model. It is found that the total valley Nernst coefficient (VNC) is three orders of magnitude larger than that in monolayer group-VI dichalcogenides. The total VNC increases with the increase of layer numbers. It is shown that the total VNC exhibits a structure with three peaks as a function of the Fermi energy. We identify that the central peak is always negative stemming from the flat band. Two shoulder peaks are positively induced by the conduction and valence bands, respectively. These predicted features can be tested experimentally. The present work would shed more light on valley caloritronics.

关键词: valley Nernst effect, twisted multilayer graphene

Abstract: Valley Nernst effect is a newly proposed and experimentally confirmed effect, which could be used to design novel thermoelectric devices. We study the valley Nernst effect in (M+N)-layer twisted multilayer graphene systems by a simple low-energy effective model. It is found that the total valley Nernst coefficient (VNC) is three orders of magnitude larger than that in monolayer group-VI dichalcogenides. The total VNC increases with the increase of layer numbers. It is shown that the total VNC exhibits a structure with three peaks as a function of the Fermi energy. We identify that the central peak is always negative stemming from the flat band. Two shoulder peaks are positively induced by the conduction and valence bands, respectively. These predicted features can be tested experimentally. The present work would shed more light on valley caloritronics.

Key words: valley Nernst effect, twisted multilayer graphene

中图分类号: (Narrow-band systems; intermediate-valence solids)

71.28.+d

72.80.Vp (Electronic transport in graphene)

Guanlin Jian(简冠林), Zhen-Gang Zhu(朱振刚), and Gang Su(苏刚). Large valley Nernst effect in twisted multilayer graphene systems[J]. 中国物理B, 2023, 32(10): 107202-107202.

Guanlin Jian(简冠林), Zhen-Gang Zhu(朱振刚), and Gang Su(苏刚). Large valley Nernst effect in twisted multilayer graphene systems[J]. Chin. Phys. B, 2023, 32(10): 107202-107202.

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Large valley Nernst effect in twisted multilayer graphene systems

Large valley Nernst effect in twisted multilayer graphene systems

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