Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

doi:10.1088/1674-1056/abd7db

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 57803-057803.doi: 10.1088/1674-1056/abd7db

Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Hao Wen(文豪), Li Xiong(熊力), Congbing Tan(谭丛兵)^‡, Kaimin Zhu(朱凯民), Yong Tang(唐勇), Jinbin Wang(王金斌)^§, and Xiangli Zhong(钟向丽)^¶

School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China

收稿日期:2020-10-10 修回日期:2020-11-29 接受日期:2021-01-04 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Congbing Tan, Jinbin Wang, Xiangli Zhong E-mail:cbtan@xtu.edu.cn;jbwang@xtu.edu.cn;xlzhong@xtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 1872251 and 11875229).

Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Hao Wen(文豪), Li Xiong(熊力), Congbing Tan(谭丛兵)^‡, Kaimin Zhu(朱凯民), Yong Tang(唐勇), Jinbin Wang(王金斌)^§, and Xiangli Zhong(钟向丽)^¶

School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China

Received:2020-10-10 Revised:2020-11-29 Accepted:2021-01-04 Online:2021-05-14 Published:2021-05-14
Contact: Congbing Tan, Jinbin Wang, Xiangli Zhong E-mail:cbtan@xtu.edu.cn;jbwang@xtu.edu.cn;xlzhong@xtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 1872251 and 11875229).

摘要/Abstract

摘要： Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2D IVA metal chalcogenide semiconductors (GIVMCs, metal = Ge, Sn, Pb；chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional (2D) tin sulfide (SnS) nanosheets using the physical vapor deposition (PVD) method and fabricated a 2D SnS visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A·W^-1 and possesses an external quantum efficiency of 4.45×10⁴%, as well as a detectivity of 1.15×10⁹ Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 mW·cm^-2, the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2D SnS can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs, prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.

关键词: two-dimensional SnS, photogating effect, low-light detection

Abstract: Due to their excellent carrier mobility, high absorption coefficient and narrow bandgap, most 2D IVA metal chalcogenide semiconductors (GIVMCs, metal = Ge, Sn, Pb；chalcogen = S, Se) are regarded as promising candidates for realizing high-performance photodetectors. We synthesized high-quality two-dimensional (2D) tin sulfide (SnS) nanosheets using the physical vapor deposition (PVD) method and fabricated a 2D SnS visible-light photodetector. The photodetector exhibits a high photoresponsivity of 161 A·W^-1 and possesses an external quantum efficiency of 4.45×10⁴%, as well as a detectivity of 1.15×10⁹ Jones under 450 nm blue light illumination. Moreover, under poor illumination at optical densities down to 2 mW·cm^-2, the responsivity of the device is higher than that at stronger optical densities. We suggest that a photogating effect in the 2D SnS photodetector is mainly responsible for its low-light responsivity. Defects and impurities in 2D SnS can trap carriers and form localized electric fields, which can delay the recombination process of electron-hole pairs, prolong carrier lifetimes, and thus improve the low-light responsivity. This work provides design strategies for detecting low levels of light using photodetectors made of 2D materials.

Key words: two-dimensional SnS, photogating effect, low-light detection

中图分类号: (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

78.67.-n

85.30.Tv (Field effect devices)

Hao Wen(文豪), Li Xiong(熊力), Congbing Tan(谭丛兵), Kaimin Zhu(朱凯民), Yong Tang(唐勇), Jinbin Wang(王金斌), and Xiangli Zhong(钟向丽). Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector[J]. 中国物理B, 2021, 30(5): 57803-057803.

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Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

Localized electric-field-enhanced low-light detection by a 2D SnS visible-light photodetector

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