High performance infrared detectors compatible with CMOS-circuit process

doi:10.1088/1674-1056/abd6fb

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 50702-050702.doi: 10.1088/1674-1056/abd6fb

High performance infrared detectors compatible with CMOS-circuit process

Chao Wang(王超)^1,2, Ning Li(李宁)¹, Ning Dai(戴宁)^1,3,4,†, Wang-Zhou Shi(石旺舟)⁵, Gu-Jin Hu(胡古今)^5,‡, and He Zhu(朱贺)⁶

1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;
4 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou 213164, China;
5 Department of Physics, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234, China;
6 Hangzhou Dianzi University, Hangzhou 310018, China

收稿日期:2020-08-10 修回日期:2020-12-18 接受日期:2020-12-28 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Ning Dai, Gu-Jin Hu E-mail:ndai@mail.sitp.ac.cn;hugj@shnu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11933006, 61805060, and 61290304).

High performance infrared detectors compatible with CMOS-circuit process

Chao Wang(王超)^1,2, Ning Li(李宁)¹, Ning Dai(戴宁)^1,3,4,†, Wang-Zhou Shi(石旺舟)⁵, Gu-Jin Hu(胡古今)^5,‡, and He Zhu(朱贺)⁶

1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;
4 Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou 213164, China;
5 Department of Physics, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234, China;
6 Hangzhou Dianzi University, Hangzhou 310018, China

Received:2020-08-10 Revised:2020-12-18 Accepted:2020-12-28 Online:2021-05-14 Published:2021-05-14
Contact: Ning Dai, Gu-Jin Hu E-mail:ndai@mail.sitp.ac.cn;hugj@shnu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11933006, 61805060, and 61290304).

摘要/Abstract

摘要： A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current (DC) bias voltage of -2.3 V, the device detectivity to blackbody irradiation is as high as 5×10¹³cm·Hz^1/2/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.

关键词: Si:P, long wavelength detectors, blocked impurity band, terahertz

Abstract: A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current (DC) bias voltage of -2.3 V, the device detectivity to blackbody irradiation is as high as 5×10¹³cm·Hz^1/2/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost.

Key words: Si:P, long wavelength detectors, blocked impurity band, terahertz

中图分类号: (Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)

07.57.Kp

33.20.Ea (Infrared spectra) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

Chao Wang(王超), Ning Li(李宁), Ning Dai(戴宁), Wang-Zhou Shi(石旺舟), Gu-Jin Hu(胡古今), and He Zhu(朱贺). High performance infrared detectors compatible with CMOS-circuit process[J]. 中国物理B, 2021, 30(5): 50702-050702.

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High performance infrared detectors compatible with CMOS-circuit process

High performance infrared detectors compatible with CMOS-circuit process

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