Effect of recombination process in femtosecond laser-induced modification on Ge crystal

doi:10.1088/1674-1056/abbbe9

中国物理B ›› 2020, Vol. 29 ›› Issue (11): 114208-.doi: 10.1088/1674-1056/abbbe9

Jia-Qi Ju(居家奇)¹, Zi-Yao Qin(秦子尧)¹, Ju-Kun Liu(刘聚坤)¹^,†(), Hong-Wei Zhao(赵宏伟)¹, Yao-Qing Huang(黄耀清)¹, Rong-Rong Hu(胡蓉蓉)¹, Hua Wu(吴华)²

收稿日期:2020-06-11 修回日期:2020-07-31 接受日期:2020-09-28 出版日期:2020-11-05 发布日期:2020-11-03

Effect of recombination process in femtosecond laser-induced modification on Ge crystal

Jia-Qi Ju(居家奇)¹, Zi-Yao Qin(秦子尧)¹, Ju-Kun Liu(刘聚坤)^{1, †}, Hong-Wei Zhao(赵宏伟)¹, Yao-Qing Huang(黄耀清)¹, Rong-Rong Hu(胡蓉蓉)¹, and Hua Wu(吴华)²$

1 College of Science, Shanghai Institute of Technology, Shanghai 201418, China
2 College of Science, Xi’an Shiyou University, Xi’an 710065, China

Received:2020-06-11 Revised:2020-07-31 Accepted:2020-09-28 Online:2020-11-05 Published:2020-11-03
Contact: ^†Corresponding author. E-mail: liujukun@126.com
Supported by:
the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11804227).

摘要/Abstract

Abstract:

The dynamics of produced excited carriers under the irradiation of Ge crystal is investigated theoretically by using femtosecond laser pulse. A two-temperature model combined with the Drude model is also used to study the nonequilibrium carrier density, carrier and lattice temperatures, and optical properties of the crystal. The properties of the surface plasmon wave when excited are also studied. The influences of non-radiation and radiative recombination process on the photoexcitation of the semiconductor during pulse and the relaxation after the pulse are described in detail. The results show that the effects of Auger recombination on the nonequilibrium carrier density and optical properties of the crystal and the properties of the surface plasmon polariton are great, whereas the effect of radiative recombination is extremely small.

Key words: two-temperature model, Ge crystal, Auger recombination, radiative recombination, surface plasmon polariton

Jia-Qi Ju(居家奇), Zi-Yao Qin(秦子尧), Ju-Kun Liu(刘聚坤), Hong-Wei Zhao(赵宏伟), Yao-Qing Huang(黄耀清), Rong-Rong Hu(胡蓉蓉), Hua Wu(吴华). [J]. 中国物理B, 2020, 29(11): 114208-.

Jia-Qi Ju(居家奇), Zi-Yao Qin(秦子尧), Ju-Kun Liu(刘聚坤), Hong-Wei Zhao(赵宏伟), Yao-Qing Huang(黄耀清), Rong-Rong Hu(胡蓉蓉), and Hua Wu(吴华)$. Effect of recombination process in femtosecond laser-induced modification on Ge crystal[J]. Chin. Phys. B, 2020, 29(11): 114208-.

图/表 8

参考文献 37

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Symbol	Description	Value	Ref.
D₀/cm²⋅s⁻¹	ambipolar diffusion coefficient	2.1 × 10⁵T_e
γ_R/cm³⋅s⁻¹	radiative recombination coefficient	1 × 10⁻⁹	[28]
γ_A/cm⁶⋅s⁻¹	Auger recombination coefficient	2 × 10⁻³¹	[29]
θ/m²	free carrier absorption coefficient	5 × 10⁻²²	[30]
τ_ep/fs	electron–phonon relaxation time	300	[31]
C_e/J⋅m⁻³⋅K⁻¹	electron heat capacity	3N_ek_B
C_l/J⋅m⁻³⋅K⁻¹	lattice heat capacity	1.7 × (1+T_l/6000)	[32]
κ_e/eV⋅s⁻¹⋅m⁻¹⋅K⁻¹	electron thermal conductivity	− 3.58 × 10¹⁹ + 6.49 × 10¹⁶T_e	[32]
κ_l/W⋅m⁻¹⋅K⁻¹	lattice thermal conductivity	675 × T_l^−1.23	[32]
τ_D/fs	Drude damping time	1	[30]
${m}_{{\rm{opt}}}^{* }$	effective optical mass of carriers	0.22	[32]
ε	unexcited dielectric constant	22.08+ i 3.03	[26]
E_g/eV	band gap	0.803-3.9 × 10⁻⁴ T_l	[32]

Effect of recombination process in femtosecond laser-induced modification on Ge crystal

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