Influence of pump intensity on atomic spin relaxation in a vapor cell

doi:10.1088/1674-1056/ab4cde

中国物理B ›› 2019, Vol. 28 ›› Issue (11): 117601-117601.doi: 10.1088/1674-1056/ab4cde

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of pump intensity on atomic spin relaxation in a vapor cell

Chen Yang(杨晨), Guan-Hua Zuo(左冠华), Zhuang-Zhuang Tian(田壮壮), Yu-Chi Zhang(张玉驰), Tian-Cai Zhang(张天才)

1 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China;
2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China;
3 College of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China

收稿日期:2019-08-23 修回日期:2019-09-29 出版日期:2019-11-05 发布日期:2019-11-05
通讯作者: Yu-Chi Zhang, Tian-Cai Zhang E-mail:yczhang@sxu.edu.cn;tczhang@sxu.edu.cn
基金资助:
supported by the National Key R&D Program of China (Grant No. 2017YFA0304502) and the National Natural Science Foundation of China (Grant Nos. 11634008, 11674203, 11574187, and 61227902).

Influence of pump intensity on atomic spin relaxation in a vapor cell

Chen Yang(杨晨)^1,2, Guan-Hua Zuo(左冠华)^1,2, Zhuang-Zhuang Tian(田壮壮)^1,2, Yu-Chi Zhang(张玉驰)³, Tian-Cai Zhang(张天才)^1,2

1 State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China;
2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China;
3 College of Physics and Electronics Engineering, Shanxi University, Taiyuan 030006, China

Received:2019-08-23 Revised:2019-09-29 Online:2019-11-05 Published:2019-11-05
Contact: Yu-Chi Zhang, Tian-Cai Zhang E-mail:yczhang@sxu.edu.cn;tczhang@sxu.edu.cn
Supported by:
supported by the National Key R&D Program of China (Grant No. 2017YFA0304502) and the National Natural Science Foundation of China (Grant Nos. 11634008, 11674203, 11574187, and 61227902).

摘要/Abstract

摘要： Atomic spin relaxation in a vapor cell, which can be characterized by the magnetic resonance linewidth (MRL), is an important parameter that eventually determines the sensitivity of an atomic magnetometer. In this paper, we have extensively studied how the pump intensity affects the spin relaxation. The experiment is performed with a cesium vapor cell, and the influence of the pump intensity on MRL is measured at room temperature at zero-field resonance. A simple model with five atomic levels of a Λ-like configuration is discussed theoretically, which can be used to represent the experimental process approximately, and the experimental results can be explained to some extent. Both the experimental and the theoretical results show a nonlinear broadening of the MRL when the pump intensity is increasing. The work helps to understand the mechanism of pump induced atomic spin relaxation in the atomic magnetometers.

关键词: atomic magnetometer, atomic spin relaxation, optical pumping

Abstract: Atomic spin relaxation in a vapor cell, which can be characterized by the magnetic resonance linewidth (MRL), is an important parameter that eventually determines the sensitivity of an atomic magnetometer. In this paper, we have extensively studied how the pump intensity affects the spin relaxation. The experiment is performed with a cesium vapor cell, and the influence of the pump intensity on MRL is measured at room temperature at zero-field resonance. A simple model with five atomic levels of a Λ-like configuration is discussed theoretically, which can be used to represent the experimental process approximately, and the experimental results can be explained to some extent. Both the experimental and the theoretical results show a nonlinear broadening of the MRL when the pump intensity is increasing. The work helps to understand the mechanism of pump induced atomic spin relaxation in the atomic magnetometers.

Key words: atomic magnetometer, atomic spin relaxation, optical pumping

中图分类号: (Relaxation effects)

76.60.Es

78.20.Ls (Magneto-optical effects) 33.57.+c (Magneto-optical and electro-optical spectra and effects) 32.80.Xx (Level crossing and optical pumping)

杨晨, 左冠华, 田壮壮, 张玉驰, 张天才. Influence of pump intensity on atomic spin relaxation in a vapor cell[J]. 中国物理B, 2019, 28(11): 117601-117601.

Chen Yang(杨晨), Guan-Hua Zuo(左冠华), Zhuang-Zhuang Tian(田壮壮), Yu-Chi Zhang(张玉驰), Tian-Cai Zhang(张天才). Influence of pump intensity on atomic spin relaxation in a vapor cell[J]. Chin. Phys. B, 2019, 28(11): 117601-117601.

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Influence of pump intensity on atomic spin relaxation in a vapor cell

Influence of pump intensity on atomic spin relaxation in a vapor cell

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