Pressure-mediated contact quality improvement between monolayer MoS2 and graphite

doi:10.1088/1674-1056/28/1/017301

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/28/1/017301

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite

Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇)

1 CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelecentronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland

收稿日期:2018-10-18 修回日期:2018-11-11 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Dongxia Shi, Guangyu Zhang E-mail:dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn
基金资助:
Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite

Mengzhou Liao(廖梦舟)^1,2, Luojun Du(杜罗军)^1,2,6, Tingting Zhang(张婷婷)^1,2,3, Lin Gu(谷林)^1,2, Yugui Yao(姚裕贵)³, Rong Yang(杨蓉)^1,2,4, Dongxia Shi(时东霞)^1,2,4, Guangyu Zhang(张广宇)^1,2,4,5

1 CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelecentronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland

Received:2018-10-18 Revised:2018-11-11 Online:2019-01-05 Published:2019-01-05
Contact: Dongxia Shi, Guangyu Zhang E-mail:dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn
Supported by:
Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

摘要/Abstract

摘要：

Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS₂ as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS₂ devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS₂ and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS₂ is significantly improved. This pressure-mediated contact quality improvement between MoS₂ and graphite comes from the enhanced charge transfer between MoS₂ and graphite when MoS₂ is stretched. Our results provide a new way to enhance the contact quality between MoS₂ and graphite for further applications.

关键词: MoS₂/graphite heterojunction, C-AFM, pressure, contact quality

Abstract:

Key words: MoS₂/graphite heterojunction, C-AFM, pressure, contact quality

中图分类号: (Novel experimental methods; measurements)

73.43.Fj

73.50.-h (Electronic transport phenomena in thin films) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

廖梦舟, 杜罗军, 张婷婷, 谷林, 姚裕贵, 杨蓉, 时东霞, 张广宇. Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite[J]. 中国物理B, 2019, 28(1): 17301-017301.

Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇). Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite[J]. Chin. Phys. B, 2019, 28(1): 17301-017301.

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Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite

Pressure-mediated contact quality improvement between monolayer MoS₂ and graphite

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