中国物理B ›› 2018, Vol. 27 ›› Issue (2): 28103-028103.doi: 10.1088/1674-1056/27/2/028103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Observation of oscillations in the transport for atomic layer MoS2

Xiao-Qiang Xie(解晓强), Ying-Zi Peng(彭英姿), Qi-Ye Zheng(郑奇烨), Yuan Li(李源), Ji Chen(陈吉)   

  1. 1. Department of Physics, School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China;
    2. Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
  • 收稿日期:2017-07-07 修回日期:2017-11-09 出版日期:2018-02-05 发布日期:2018-02-05
  • 通讯作者: Ying-Zi Peng E-mail:yingzip@hdu.edu.cn
  • 基金资助:
    Project supported by the Zhejiang Provincial Natural Science Foundation, China (Grant Nos. LY16F040003 and LY16A040007) and the National Natural Science Foundation of China (Grant Nos. 51401069 and 11204058).

Observation of oscillations in the transport for atomic layer MoS2

Xiao-Qiang Xie(解晓强)1, Ying-Zi Peng(彭英姿)1,2, Qi-Ye Zheng(郑奇烨)1, Yuan Li(李源)1,2, Ji Chen(陈吉)1   

  1. 1. Department of Physics, School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China;
    2. Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China
  • Received:2017-07-07 Revised:2017-11-09 Online:2018-02-05 Published:2018-02-05
  • Contact: Ying-Zi Peng E-mail:yingzip@hdu.edu.cn
  • About author:81.07.-b; 73.23.-b; 68.65.-k
  • Supported by:
    Project supported by the Zhejiang Provincial Natural Science Foundation, China (Grant Nos. LY16F040003 and LY16A040007) and the National Natural Science Foundation of China (Grant Nos. 51401069 and 11204058).

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摘要： In our experiment, an atomic layer MoS2 structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at~107 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed.

关键词: atomic-layer MoS2, oscillations in the transport, circular polarized light, photo-excited carriers

Abstract: In our experiment, an atomic layer MoS2 structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at~107 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed.

Key words: atomic-layer MoS2, oscillations in the transport, circular polarized light, photo-excited carriers

中图分类号:  (Nanoscale materials and structures: fabrication and characterization)

  • 81.07.-b
73.23.-b (Electronic transport in mesoscopic systems) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)